Abstract: A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a second side of the semiconductor die opposite the first side; a heat sink clip thermally coupled to a pad at the second side of the semiconductor die; and a molding compound encapsulating the die, part of the leads, part of the heat sink clip, and at least part of the substrate. The molding compound has a first main side, a second main side opposite the first main side and at which the substrate is disposed, and an edge extending between the first main side and the second main side. The leads protrude from opposing first and second faces of the edge of the molding compound. The heat sink clip protrudes from opposing third and fourth faces of the edge of the molding compound.

Abstract: A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a pad at a second side of the semiconductor die opposite the first side; a heat sink clip thermally coupled to the pad; and a molding compound encapsulating the semiconductor die, part of the leads, part of the heat sink clip, and at least part of the substrate. The molding compound has a first main side, a second main side opposite the first main side and at which the substrate is disposed, and an edge extending between the first main side and the second main side. The leads protrude from opposing first and second faces of the edge of the molding compound. The heat sink clip protrudes from opposing third and fourth faces of the edge of the molding compound.

Abstract: A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a pad at a second side of the semiconductor die opposite the first side; a heat sink clip thermally coupled to the pad; and a molding compound encapsulating the semiconductor die, part of the leads, part of the heat sink clip, and at least part of the substrate. The molding compound has a first main side, a second main side opposite the first main side and at which the substrate is disposed, and an edge extending between the first main side and the second main side. The leads protrude from opposing first and second faces of the edge of the molding compound. The heat sink clip protrudes from opposing third and fourth faces of the edge of the molding compound.

Abstract: The method for fabricating an electrical module is disclosed. In one example, the method includes providing a bottom unit comprising a plateable encapsulant. Selective areas of the bottom unit are activated thereby turning them into electrically conductive regions. At least one electrical device comprising external contact elements is provided. The method includes placing the electrical device on the bottom unit so that the external contact elements are positioned above at least a first subset of the electrically conductive regions, and performing a plating process on the electrically conductive regions for generating plated regions and for electrically connecting the external contact elements with at least a first subset of the plated regions.

Abstract: A lead frame includes a die pad, a first lead extending away from the die pad, a peripheral structure mechanically connected to the first lead and the die pad, and a first groove in an outer surface of the first lead. The first groove extends longitudinally along the first lead away from the die pad.

Abstract: A method for fabricating a power semiconductor package includes: providing a leadframe having a die pad and a frame, wherein the die pad is connected to the frame by at least one tie bar; attaching a semiconductor die to the die pad; laser cutting through the at least one tie bar, thereby forming a cut surface; and after the laser cutting, molding over the die pad and the semiconductor die, wherein the cut surface is completely covered by molding compound.

Abstract: A semiconductor package includes: a carrier having an electrically insulative body and a first contact structure at a first side of the electrically insulative body; and a semiconductor die having a first pad attached to the first contact structure of the carrier, the first pad being at source or emitter potential. The first pad is spaced inward from an edge of the semiconductor die by a first distance. The semiconductor die has an edge termination region between the edge and the first pad. The first contact structure of the carrier is spaced inward from the edge of the semiconductor die by a second distance greater than the first distance such that an electric field that emanates from the edge termination region in a direction of the carrier during normal operation of the semiconductor die does not reach the first contact structure of the carrier. Methods of production are also provided.

Abstract: A pressure sensor includes a lidless structure defining an internal chamber for a sealed environment and presenting an aperture; a chip including a membrane deformable on the basis of external pressure, the chip being mounted outside the lidless structure in correspondence to the aperture so that the membrane closes the sealed environment; and a circuitry configured to provide a pressure measurement information based on the deformation of the membrane.

Abstract: A pressure sensor includes a lidless structure defining an internal chamber for a sealed environment and presenting an aperture; a chip including a membrane deformable on the basis of external pressure, the chip being mounted outside the lidless structure in correspondence to the aperture so that the membrane closes the sealed environment; and a circuitry configured to provide a pressure measurement information based on the deformation of the membrane.

Abstract: A lead frame includes a die pad, a first lead extending away from the die pad, a peripheral structure mechanically connected to the first lead and the die pad, and a first groove in an outer surface of the first lead. The first groove extends longitudinally along the first lead away from the die pad.

Abstract: A method of forming a semiconductor device includes providing a semiconductor package comprising an electrically insulating mold compound body, a semiconductor die that is encapsulated by the mold compound body, a plurality of electrically conductive leads that each protrude out of the mold compound body, and a metal heat slug, the metal heat slug comprising a rear surface that is exposed from the mold compound body, coating outer portions of the leads that are exposed from the mold compound body with a metal coating, and after completing the coating of the outer portions of the leads, providing a planar metallic heat sink interface surface on the semiconductor device which is exposed from the mold compound body, and substantially devoid of the metal coating.

Abstract: A semiconductor package having an electrically insulating mold compound body, a metal heat slug and a plurality of electrically conductive leads is provided. The heat slug has a rear surface that is exposed from the mold compound body and a die attach surface opposite the rear surface and to which a semiconductor die is mounted. each of the leads have outer portions that are exposed from the mold compound body. The outer portions of the leads are coated with a metal coating. After completing the coating of the outer portions of the leads, a planar metallic heat sink interface surface is provided on the semiconductor device. The planar metallic heat sink interface surface is exposed from the mold compound body, thermally coupled to the semiconductor die via the heat slug, and substantially devoid of the metal coating.

Abstract: A method of forming a semiconductor device includes providing a semiconductor package comprising an electrically insulating mold compound body, a semiconductor die that is encapsulated by the mold compound body, a plurality of electrically conductive leads that each protrude out of the mold compound body, and a metal heat slug, the metal heat slug comprising a rear surface that is exposed from the mold compound body, coating outer portions of the leads that are exposed from the mold compound body with a metal coating, and after completing the coating of the outer portions of the leads, providing a planar metallic heat sink interface surface on the semiconductor device which is exposed from the mold compound body, and substantially devoid of the metal coating.

Abstract: A method for forming a matrix composite layer on a workpiece and a workpiece with a matrix composite layer are disclosed. In an embodiment the method includes forming a wall around a metallic surface such that the wall extends in a vertical direction from a plane formed by the metallic surface, and depositing a filler material in a walled area on the metallic surface. The method further includes depositing a plastic material on the filler material and performing a vacuum treatment of the filler material and the plastic material thereby forming a matrix composite layer disposed on the metallic surface.

Abstract: According to an embodiment of a method, the method includes forming a first thermally conductive layer on an outer surface of a semiconductor package. The first thermally conductive layer formed on the outer surface of the semiconductor package is configured to be mounted to an external heat sink.

Abstract: According to an embodiment of a method, the method includes forming a first thermally conductive layer on an outer surface of a semiconductor package. The first thermally conductive layer formed on the outer surface of the semiconductor package is configured to be mounted to an external heat sink.

Abstract: A method for forming a matrix composite layer on a workpiece and a workpiece with a matrix composite layer are disclosed. In an embodiment the method includes forming a wall around a metallic surface such that the wall extends in a vertical direction from a plane formed by the metallic surface, and depositing a filler material in a walled area on the metallic surface. The method further includes depositing a plastic material on the filler material and performing a vacuum treatment of the filler material and the plastic material thereby forming a matrix composite layer disposed on the metallic surface.