Patents by Inventor Jayant Ashokkumar

Jayant Ashokkumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND APPARATUS TO IMPLEMENT A RESET FUNCTION IN A NON-VOLATILE STATIC RANDOM ACCESS MEMORY
    Publication number: 20120213027
    Abstract: A system and method for resetting semiconductor memory is disclosed. The present invention uses an array reset circuit to independently drive the bit lines of a volatile memory cell high or low so as to reset either a single memory cell or all memory cells in an array with all 0's or all 1's.
    Type: Application
    Filed: August 24, 2011
    Publication date: August 23, 2012
    Applicant: Cypress Semiconductor Corporation
    Inventors: James D. Allan, Jayant Ashokkumar
  • Method and apparatus to program and erase a non-volatile static random access memory from the bit lines
    Patent number: 7539054
    Abstract: A system and method for programming and erasing a semiconductor memory is disclosed. More particularly, the present invention uses the bit lines of a volatile memory portion of semiconductor memory so as to program and erase the non-volatile portion of the semiconductor memory.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: May 26, 2009
    Assignee: Cypress Semiconductor Corp.
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan
  • Method and apparatus to program both sides of a non-volatile static random access memory
    Patent number: 7518916
    Abstract: A system and method for programming both sides of the non-volatile portion in a semiconductor memory is disclosed. The present invention erases and then programs the memory stacks in the non-volatile portion of an nvSRAM.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: April 14, 2009
    Assignee: Cypress Semiconductor Corporation
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan, John Roger Gill
  • Method and apparatus to create an erase disturb on a non-volatile static random access memory cell
    Patent number: 7505303
    Abstract: A system and method for disturbing an erased memory location structure in a non-volatile portion of a semiconductor memory is disclosed. The present invention applies a voltage to a first memory location of a non-volatile portion of the semiconductor memory that is in a programmed state and a second memory location of a non-volatile portion of the semiconductor memory that is in an erased state so as to keep the first memory location programmed and to transition the second memory location from a programmed state to an erased state.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: March 17, 2009
    Assignee: Cypress Semiconductor Corporation
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan
  • Method and apparatus to implement a reset function in a non-volatile static random access memory
    Publication number: 20080151654
    Abstract: A system and method for resetting semiconductor memory is disclosed. The present invention uses an array reset circuit to independently drive the bit lines of a volatile memory cell high or low so as to reset either a single memory cell or all memory cells in an array with all 0's or all 1's.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Inventors: James D. Allan, Jayant Ashokkumar
  • Method and apparatus to program and erase a non-volatile static random access memory from the bit lines
    Publication number: 20080155186
    Abstract: A system and method for programming and erasing a semiconductor memory is disclosed. More particularly, the present invention uses the bit lines of a volatile memory portion of semiconductor memory so as to program and erase the non-volatile portion of the semiconductor memory.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan
  • Method and apparatus to create an erase disturb on a non-volatile static random access memory cell
    Publication number: 20080151643
    Abstract: A system and method for disturbing an erased memory location structure in a non-volatile portion of a semiconductor memory is disclosed. The present invention applies a voltage to a first memory location of a non-volatile portion of the semiconductor memory that is in a programmed state and a second memory location of a non-volatile portion of the semiconductor memory that is in an erased state so as to keep the first memory location programmed and to transition the second memory location from a programmed state to an erased state.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan
  • Method and apparatus to program both sides of a non-volatile static random access memory
    Publication number: 20080151616
    Abstract: A system and method for programming both sides of the non-volatile portion in a semiconductor memory is disclosed. The present invention erases and then programs the memory stacks in the non-volatile portion of an nvSRAM.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Inventors: Jayant Ashokkumar, David W. Still, James D. Allan, John Roger Gill