Patents by Inventor Jaydeep Kulkarni
Jaydeep Kulkarni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11881435Abstract: A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.Type: GrantFiled: May 3, 2022Date of Patent: January 23, 2024Assignee: Board of Regents, The University of Texas SystemInventors: Sidlgata V. Sreenivasan, Akhila Mallavarapu, Jaydeep Kulkarni, Michael Watts, Sanjay Banerjee
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Publication number: 20240005982Abstract: A memory device includes at least one bitcell coupled to a local bitline. The at least one bitcell includes first, second, and third sets of a plurality of transistor devices. The first set is configured to form at least one write port. The at least one write port receives digital data. The second set of the plurality of transistor devices is configured as an inverter pair that stores the digital data. The third set of the plurality of transistor devices is configured to form at least one read port. The at least one read port is used to access the digital data from the inverter pair and output the digital data on the local bitline. The plurality of transistor devices consists of an equal number of P-channel transistor devices and N-channel transistor devices.Type: ApplicationFiled: June 29, 2022Publication date: January 4, 2024Inventors: Amlan Ghosh, John R. Riley, Feroze Merchant, Jaydeep Kulkarni
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Publication number: 20230419010Abstract: Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.Type: ApplicationFiled: December 14, 2022Publication date: December 28, 2023Inventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Mark McDermott, Jaydeep Kulkarni
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Publication number: 20230124676Abstract: Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.Type: ApplicationFiled: December 14, 2022Publication date: April 20, 2023Inventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Mark McDermott, Jaydeep Kulkarni
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Publication number: 20230118578Abstract: Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.Type: ApplicationFiled: December 14, 2022Publication date: April 20, 2023Inventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Mark McDermott, Jaydeep Kulkarni
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Publication number: 20230116581Abstract: A method for fabricating a three-dimensional (3D) stacked integrated circuit. Pick-and-place strategies are used to stack the source wafers with device layers fabricated using standard two-dimensional (2D) semiconductor fabrication technologies. The source wafers may be stacked in either a sequential or parallel fashion. The stacking may be in a face-to-face, face-to-back, back-to-face or back-to-back fashion. The source wafers that are stacked in a face-to-back, back-to-face or back-to-back fashion may be connected using Through Silicon Vias (TSVs). Alternatively, source wafers that are stacked in a face-to-face fashion may be connected using Inter Layer Vias (ILVs).Type: ApplicationFiled: December 14, 2022Publication date: April 13, 2023Inventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Ovadia Abed, Mark McDermott, Jaydeep Kulkarni, Shrawan Singhal
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Patent number: 11600525Abstract: A method for fabricating a three-dimensional (3D) stacked integrated circuit. Pick-and-place strategies are used to stack the source wafers with device layers fabricated using standard two-dimensional (2D) semiconductor fabrication technologies. The source wafers may be stacked in either a sequential or parallel fashion. The stacking may be in a face-to-face, face-to-back, back-to-face or back-to-back fashion. The source wafers that are stacked in a face-to-back, back-to-face or back-to-back fashion may be connected using Through Silicon Vias (TSVs). Alternatively, source wafers that are stacked in a face-to-face fashion may be connected using Inter Layer Vias (ILVs).Type: GrantFiled: December 21, 2018Date of Patent: March 7, 2023Assignee: Board of Regents, The University of Texas SystemInventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Ovadia Abed, Mark McDermott, Jaydeep Kulkarni, Shrawan Singhal
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Patent number: 11489526Abstract: Described is a level-shifter that can save area between voltage domains with limited voltage differential, and further save power by steering current between two power supply rails. The level-shifter comprises: an input to receive a first signal between a first reference rail and a second reference rail; an output to provide a second signal the first reference rail and a third reference rail, wherein in a voltage level of the third reference rail is higher than a voltage level of the second reference rail, and wherein a voltage level of the first reference is lower than the voltage level of the second reference rail and the third reference rail; and a circuitry coupled to the input and the output, wherein the circuitry is to steer current from the third reference rail to the second reference rail.Type: GrantFiled: May 22, 2020Date of Patent: November 1, 2022Assignee: Intel CorporationInventors: Andres Malavasi Mora, Jaydeep Kulkarni, Anupama Thaploo, Muhammad Khellah
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Publication number: 20220270930Abstract: A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.Type: ApplicationFiled: May 3, 2022Publication date: August 25, 2022Inventors: Sidlgata V. Sreenivasan, Akhila Mallavarapu, Jaydeep Kulkarni, Michael Watts, Sanjay Banerjee
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Patent number: 11355397Abstract: A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.Type: GrantFiled: May 12, 2020Date of Patent: June 7, 2022Assignee: Board of Regents, The University of Texas SystemInventors: Sidlgata V. Sreenivasan, Akhila Mallavarapu, Jaydeep Kulkarni, Michael Watts, Sanjay Banerjee
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Publication number: 20210366771Abstract: A method for fabricating a three-dimensional (3D) stacked integrated circuit. Pick-and-place strategies are used to stack the source wafers with device layers fabricated using standard two-dimensional (2D) semiconductor fabrication technologies. The source wafers may be stacked in either a sequential or parallel fashion. The stacking may be in a face-to-face, face-to-back, back-to-face or back-to-back fashion. The source wafers that are stacked in a face-to-back, back-to-face or back-to-back fashion may be connected using Through Silicon Vias (TSVs). Alternatively, source wafers that are stacked in a face-to-face fashion may be connected using Inter Layer Vias (ILVs).Type: ApplicationFiled: December 21, 2018Publication date: November 25, 2021Inventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Ovadia Abed, Mark McDermott, Jaydeep Kulkarni, Shrawan Singhal
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Publication number: 20210350061Abstract: Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.Type: ApplicationFiled: September 6, 2019Publication date: November 11, 2021Inventors: Sidlgata V. Sreenivasan, Paras Ajay, Aseem Sayal, Mark McDermott, Jaydeep Kulkarni
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Publication number: 20200365464Abstract: A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.Type: ApplicationFiled: May 12, 2020Publication date: November 19, 2020Inventors: Sidlgata V. Sreenivasan, Akhila Mallavarapu, Jaydeep Kulkarni, Michael Watts, Sanjay Banerjee
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Publication number: 20200358443Abstract: Described is a level-shifter that can save area between voltage domains with limited voltage differential, and further save power by steering current between two power supply rails. The level-shifter comprises: an input to receive a first signal between a first reference rail and a second reference rail; an output to provide a second signal the first reference rail and a third reference rail, wherein in a voltage level of the third reference rail is higher than a voltage level of the second reference rail, and wherein a voltage level of the first reference is lower than the voltage level of the second reference rail and the third reference rail; and a circuitry coupled to the input and the output, wherein the circuitry is to steer current from the third reference rail to the second reference rail.Type: ApplicationFiled: May 22, 2020Publication date: November 12, 2020Applicant: Intel CorporationInventors: Andres Malavasi Mora, Jaydeep Kulkarni, Anupama Thaploo, Muhammad Khellah
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Patent number: 10713333Abstract: A calculation circuit for calculating a transform of an input sequence may include a plurality of butterfly computation circuits configured to perform a plurality of butterfly computations and to produce a plurality of outputs during each of a plurality of computation stages, a wired routing network configured to route a first plurality of outputs of the plurality of butterfly computation circuits from a first computation stage of the plurality of computation stages as input to the plurality of butterfly computation circuits during a second computation stage of the plurality of computation stages according to a reconfigurable routing configuration, and routing control circuitry configured to modify the reconfigurable routing configuration for a third computation stage of the plurality of computation stages.Type: GrantFiled: December 21, 2015Date of Patent: July 14, 2020Assignee: Apple Inc.Inventors: Farhana Sheikh, Ankit Sharma, Jaydeep Kulkarni
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Patent number: 10666259Abstract: Described is a level-shifter that can save area between voltage domains with limited voltage differential, and further save power by steering current between two power supply rails. The level-shifter comprises: an input to receive a first signal between a first reference rail and a second reference rail; an output to provide a second signal the first reference rail and a third reference rail, wherein in a voltage level of the third reference rail is higher than a voltage level of the second reference rail, and wherein a voltage level of the first reference is lower than the voltage level of the second reference rail and the third reference rail; and a circuitry coupled to the input and the output, wherein the circuitry is to steer current from the third reference rail to the second reference rail.Type: GrantFiled: December 21, 2018Date of Patent: May 26, 2020Assignee: Intel CorporationInventors: Andres Malavasi Mora, Jaydeep Kulkarni, Anupama Thaploo, Muhammad Khellah
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Patent number: 10511224Abstract: Some embodiments include apparatus and methods using a charge pump coupled to a first supply power node and a second supply power node. The charge pump is arranged to transfer charge from the first supply power node to the second supply power node during a first time interval and to transfer charge from the second supply power node to the first supply power node during a second time interval.Type: GrantFiled: April 3, 2018Date of Patent: December 17, 2019Assignee: Intel CorporationInventors: Jaydeep Kulkarni, Yong Shim, Pascal A. Meinerzhagen, Muhammad M. Khellah
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Patent number: 10217495Abstract: Some embodiments include apparatuses and methods having non-volatile memory cells, a data line associated with a group of non-volatile memory cells of the non-volatile memory cells, a first transistor coupled to the data line and a node, a second transistor coupled to the node and an additional node, a pull-up component coupled to the node and a supply node, and an additional pull-up component coupled to the additional node and the supply node.Type: GrantFiled: January 5, 2018Date of Patent: February 26, 2019Assignee: Intel CorporationInventor: Jaydeep Kulkarni
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Patent number: 10199091Abstract: An apparatus is described. The apparatus includes a semiconductor chip. The semiconductor chip includes a memory having multiple storage cells. The storage cells are to receive a supply voltage. The semiconductor chip includes supply voltage retention circuitry. The supply voltage retention circuitry is to determine a level of the supply voltage at which the storage cells are able to retain their respective data. The supply voltage retention circuitry is to receive the supply voltage during a stress mode of the supply voltage retention circuitry. The supply voltage retention circuitry is to more weakly retain its stored information than the storage cells during a measurement mode at which the level is determined.Type: GrantFiled: December 8, 2016Date of Patent: February 5, 2019Assignee: Intel CorporationInventors: Minki Cho, Jaydeep Kulkarni, Carlos Tokunaga, Muhammad Khellah, James Tschanz
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Publication number: 20180336161Abstract: A calculation circuit for calculating a transform of an input sequence may include a plurality of butterfly computation circuits configured to perform a plurality of butterfly computations and to produce a plurality of outputs during each of a plurality of computation stages, a wired routing network configured to route a first plurality of outputs of the plurality of butterfly computation circuits from a first computation stage of the plurality of computation stages as input to the plurality of butterfly computation circuits during a second computation stage of the plurality of computation stages according to a reconfigurable routing configuration, and routing control circuitry configured to modify the reconfigurable routing configuration for a third computation stage of the plurality of computation stages.Type: ApplicationFiled: December 21, 2015Publication date: November 22, 2018Inventors: Farhana SHEIKH, Ankit SHARMA, Jaydeep KULKARNI