Abstract: Described is an apparatus which comprises: a controllable power gate coupled to an ungated power supply node and a gated power supply node; and a charge-pump circuit operable to be turned on and off according to a logic, wherein the charge pump circuit is coupled in parallel to the controllable power gate and also coupled to the ungated power supply node and the gated power supply node.

Abstract: Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase.

Abstract: In an embodiment, an apparatus includes: a repeater to receive an input signal at an input node and output an output signal at an output node; a dynamic header device coupled between the repeater and a supply voltage node; and a feedback device coupled between the output node and the dynamic header device to dynamically control the dynamic header device based at least in part on the output signal. Other embodiments are described and claimed.

Abstract: Apparatuses, methods and storage media associated with single-ended sensing array design are disclosed herein. In embodiments, a memory device may include bitcell arrays, clipper circuitry, read merge circuitry, and a set dominant latch (SDL). The clipper circuitry may be coupled to a read port node of a first bitcell array of the bitcell arrays and a local bitline (LBL) node, the clipper circuitry to provide a voltage drop between the read port node and the LBL node. The read merge circuitry coupled to the clipper circuitry at the LBL node, the read merge circuitry to drive a value of a global bitline (GBL) node based on a value of the LBL node. The SDL coupled to the GBL node to sense the value of the GBL node. Other embodiments may be described and/or claimed.

Abstract: Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase.

Abstract: Embodiments include a resistor, coupled on a signal path, that includes one or more resistive memory elements, such as one or more magnetic tunnel junctions (MTJs). The resistance of the resistive memory elements may be digitally trimmable to adjust a resistance of the resistor on the signal path. The resistor may be incorporated into an analog or mixed signal circuit to pass an analog signal on the signal path. Other embodiments may be described and claimed.

Abstract: Apparatuses, methods and storage media associated with single-ended sensing array design are disclosed herein. In embodiments, a memory device may include bitcell arrays, clipper circuitry, read merge circuitry, and a set dominant latch (SDL). The clipper circuitry may be coupled to a read port node of a first bitcell array of the bitcell arrays and a local bitline (LBL) node, the clipper circuitry to provide a voltage drop between the read port node and the LBL node. The read merge circuitry coupled to the clipper circuitry at the LBL node, the read merge circuitry to drive a value of a global bitline (GBL) node based on a value of the LBL node. The SDL coupled to the GBL node to sense the value of the GBL node. Other embodiments may be described and/or claimed.

Abstract: Described is an apparatus which comprises: a memory bit-cell; a local bit-line (LBL) coupled to the memory bit-cell via a read port device; a NAND gate circuitry coupled to the LBL; and a stack of keepers coupled to the LBL, wherein at least one transistor of the stack of keepers is controllable according to an output of the NAND gate circuitry, wherein the stack of keepers includes transistors with variable strength which are to be turned on overtime.

Abstract: Embodiments include circuits, apparatuses, and systems for voltage level shifter monitors. In embodiments, a voltage level shifter monitor may include a first signal generator to generate a signal in a first voltage domain, a second signal generator to generate a second signal in a second voltage domain, where the second digital signal corresponds to the first digital signal, a voltage level shifter replica circuit to convert the first digital signal from the first voltage domain to a third digital signal in the second voltage domain, and a comparison circuit to generate a digital error signal based at least in part on the second digital signal and the third digital signal. Other embodiments may be described and claimed.

Abstract: Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase.

Abstract: Apparatuses, methods and storage media associated with single-ended sensing array design are disclosed herein. In embodiments, a memory device may include bitcell arrays, clipper circuitry, read merge circuitry, and a set dominant latch (SDL). The clipper circuitry may be coupled to a read port node of a first bitcell array of the bitcell arrays and a local bitline (LBL) node, the clipper circuitry to provide a voltage drop between the read port node and the LBL node. The read merge circuitry coupled to the clipper circuitry at the LBL node, the read merge circuitry to drive a value of a global bitline (GBL) node based on a value of the LBL node. The SDL coupled to the GBL node to sense the value of the GBL node. Other embodiments may be described and/or claimed.

Abstract: Described is an apparatus which comprises: a memory bit-cell; a local bit-line (LBL) coupled to the memory bit-cell via a read port device; a NAND gate circuitry coupled to the LBL; and a stack of keepers coupled to the LBL, wherein at least one transistor of the stack of keepers is controllable according to an output of the NAND gate circuitry, wherein the stack of keepers includes transistors with variable strength which are to be turned on overtime.

Abstract: In an embodiment, an apparatus includes: a repeater to receive an input signal at an input node and output an output signal at an output node; a dynamic header device coupled between the repeater and a supply voltage node; and a feedback device coupled between the output node and the dynamic header device to dynamically control the dynamic header device based at least in part on the output signal. Other embodiments are described and claimed.

Abstract: Apparatuses, methods and storage media associated with single-ended sensing array design are disclosed herein. In embodiments, a memory device may include bitcell arrays, clipper circuitry, read merge circuitry, and a set dominant latch (SDL). The clipper circuitry may be coupled to a read port node of a first bitcell array of the bitcell arrays and a local bitline (LBL) node, the clipper circuitry to provide a voltage drop between the read port node and the LBL node. The read merge circuitry coupled to the clipper circuitry at the LBL node, the read merge circuitry to drive a value of a global bitline (GBL) node based on a value of the LBL node. The SDL coupled to the GBL node to sense the value of the GBL node. Other embodiments may be described and/or claimed.

Abstract: Embodiments include circuits, apparatuses, and systems for voltage level shifter monitors. In embodiments, a voltage level shifter monitor may include a first signal generator to generate a signal in a first voltage domain, a second signal generator to generate a second signal in a second voltage domain, where the second digital signal corresponds to the first digital signal, a voltage level shifter replica circuit to convert the first digital signal from the first voltage domain to a third digital signal in the second voltage domain, and a comparison circuit to generate a digital error signal based at least in part on the second digital signal and the third digital signal. Other embodiments may be described and claimed.

Abstract: In some embodiments, disclosed is a wordline boosting technique using a self-timed capacitive charge boosting approach.

Abstract: Described is an apparatus which comprises: a bit-line (BL) read port; a first local bit-line (LBL) coupled to the BL read port; a second LBL; and one or more clipper devices coupled to the first and second LBLs. The apparatus allows for low swing bit-line to be used for large signal memory arrays. The low swing operation enables reduction in switching dynamic capacitance. The apparatus also describes a split input NAND/NOR gate for bit-line keeper control which achieves lower VMIN, higher noise tolerance, and improved keeper aging mitigation. Described is also an apparatus for low swing write operation which can be enabled at high voltage without degrading the low voltage operation.

Abstract: Described is an apparatus for power management. The apparatus comprises: a first power supply node; a second power supply node; a controllable device coupled to the first power supply node and to the second power supply node, the controllable device operable to short the first power supply node to the second power supply node; a load coupled to the second power supply node; and a charge recovery pump (CRP) coupled to the first and second power supply nodes.

Abstract: Described is an apparatus which comprises: a controllable power gate coupled to an ungated power supply node and a gated power supply node; and a charge-pump circuit operable to be turned on and off according to a logic, wherein the charge pump circuit is coupled in parallel to the controllable power gate and also coupled to the ungated power supply node and the gated power supply node.

Abstract: The disclosed system and method detect and correct register file read path errors that may occur as a result of reducing or eliminating supply voltage guardbands and/or frequency guardbands for a CPU, thereby increasing overall energy efficiency of the system.