Abstract: Disclosed are devices and methods for improving power added efficiency and linearity of radio-frequency power amplifiers implemented in flip-chip configurations. In some embodiments, a harmonic termination circuit can be provided so as to be separate from an output matching network configured to provide impedance matching at a fundamental frequency. The harmonic termination circuit can be configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. Such a configuration of separate fundamental matching network and harmonic termination circuit allows each to be tuned separately to thereby improve performance parameters such as power added efficiency and linearity.

Abstract: According to some implementations, a radio-frequency (RF) module is disclosed, comprising a first substrate. The radio-frequency module also includes a radio-frequency device mounted on the first substrate, the radio-frequency device including a second substrate. In some embodiments, the second substrate includes a first side and a second side, a set of support structures implemented on the second side of the substrate, the set of support structures defining a mounting volume on the second side of the second substrate, and a component implemented within the mounting volume. The radio-frequency module may further comprise a first overmold structure encapsulating at least a portion of the set of support structures.

Abstract: Methods for improving thermal performance, such as thermal dissipation, of flip chip packages that include one or more flip chip dies are disclosed. In some embodiments, a thermal collection layer can be formed on a surface of a flip chip die. The thermal collection layer can be configured to dissipate heat generated by the flip chip die. In some variations, the thermal collection layer can be constructed using materials having high thermal conductivity.

Abstract: Disclosed are devices and methods for improving power added efficiency and linearity of radio-frequency power amplifiers implemented in flip-chip configurations. In some embodiments, a harmonic termination circuit can be provided so as to be separate from an output matching network configured to provide impedance matching at a fundamental frequency. The harmonic termination circuit can be configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. Such a configuration of separate fundamental matching network and harmonic termination circuit allows each to be tuned separately to thereby improve performance parameters such as power added efficiency and linearity.

Abstract: Disclosed are devices and methods for improving power added efficiency and linearity of radio-frequency power amplifiers implemented in flip-chip configurations. In some embodiments, a harmonic termination circuit can be provided so as to be separate from an output matching network configured to provide impedance matching at a fundamental frequency. The harmonic termination circuit can be configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. Such a configuration of separate fundamental matching network and harmonic termination circuit allows each to be tuned separately to thereby improve performance parameters such as power added efficiency and linearity.

Abstract: Electronic devices with improved thermal performance, such as thermal dissipation, of flip chip packages that include one or more flip chip dies are disclosed. In some embodiments, a thermal collection layer can be formed on a surface of a flip chip die. The thermal collection layer can be configured to dissipate heat generated by the flip chip die. In some variations, the thermal collection layer can be constructed using materials having high thermal conductivity.

Abstract: Methods for improving thermal performance, such as thermal dissipation, of flip chip packages that include one or more flip chip dies are disclosed. In some embodiments, a thermal collection layer can be formed on a surface of a flip chip die. The thermal collection layer can be configured to dissipate heat generated by the flip chip die. In some variations, the thermal collection layer can be constructed using materials having high thermal conductivity.

Abstract: Electronic devices with improved thermal performance, such as thermal dissipation, of flip chip packages that include one or more flip chip dies are disclosed. In some embodiments, a thermal collection layer can be formed on a surface of a flip chip die. The thermal collection layer can be configured to dissipate heat generated by the flip chip die. In some variations, the thermal collection layer can be constructed using materials having high thermal conductivity.