Abstract: An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm2. A ratio of a coefficient of thermal expansion of the substrate (CTEsub) to a coefficient of thermal expansion of the integrated circuit die (CTEdie) is at least about 3:1. A method of manufacturing an IC package is also disclosed.

Abstract: An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm2. A ratio of a coefficient of thermal expansion of the substrate (CTEsub) to a coefficient of thermal expansion of the integrated circuit die (CTEdie) is at least about 3:1. A method of manufacturing an IC package is also disclosed.

Abstract: An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm2. A ratio of a coefficient of thermal expansion of the substrate (CTEsub) to a coefficient of thermal expansion of the integrated circuit die (CTEdie) is at least about 3:1. A method of manufacturing an IC package is also disclosed.

Abstract: An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm2. A ratio of a coefficient of thermal expansion of the substrate (CTEsub) to a coefficient of thermal expansion of the integrated circuit die (CTEdie) is at least about 3:1. A method of manufacturing an IC package is also disclosed.

Abstract: Embodiments of the invention provides an IC system in which low-power chips can be positioned vertically proximate high-power chips without suffering the effects of overheating. In one embodiment, the IC system includes a first substrate, a high-power chip disposed on a first side of the first substrate, a thermal conductive pad disposed on a second side of the first substrate, one or more thermal conductive features formed in the first substrate, wherein the thermal conductive features thermally connect the high-power chip and the thermal conductive pad, and a heat sink attached to a surface of the thermal conductive pad, wherein the heat sink is in thermal communication with the thermal conductive pad. By having thermal conductive features formed through the first substrate to thermally connect the high-power chip and the thermal conductive pad, heat generated by the high-power chip can be effectively dissipated into the heat sink.

Abstract: Embodiments of the invention provides an IC system in which low-power chips can be positioned vertically proximate high-power chips without suffering the effects of overheating. In one embodiment, the IC system includes a first substrate, a high-power chip disposed on a first side of the first substrate, a thermal conductive pad disposed on a second side of the first substrate, one or more thermal conductive features formed in the first substrate, wherein the thermal conductive features thermally connect the high-power chip and the thermal conductive pad, and a heat sink attached to a surface of the thermal conductive pad, wherein the heat sink is in thermal communication with the thermal conductive pad. By having thermal conductive features formed through the first substrate to thermally connect the high-power chip and the thermal conductive pad, heat generated by the high-power chip can be effectively dissipated into the heat sink.

Abstract: Embodiments of the invention provide an IC system in which low-power chips can be positioned proximate high-power chips without suffering the effects of overheating. In one embodiment, the IC system may include a first substrate, a high-power chip embedded within the first substrate, a second substrate disposed on a first side of the first substrate, the first substrate and the second substrate are in electrical communication with each other, and a low-power chip disposed on the second substrate. In various embodiments, a heat distribution layer is disposed adjacent to the high-power chip such that the heat generated by the high-power chip can be effectively dissipated into an underlying printed circuit board attached to the first substrate, thereby preventing heat transfer from the high-power chip to the low-power chip. Therefore, the lifetime of the low-power chip is extended.