Abstract: In a CDR (clock data recovery) deserializer, a clock divider receives a recovered clock signal (SCLK) and generates a divided clock signal (RPCLK). The frequency of the divided clock signal is lowered with each cycle of the divided clock signal being generated for each count of cycles of the recovered clock signal up to a predetermined ratio number. A serial-to-parallel shift register shifts in recovered serial data bits with each cycle of the recovered clock signal and outputs the predetermined ratio number of the shifted recovered serial data bits at a predetermined transition of every cycle of the divided clock signal. A SYNC (synchronization) detect logic asserts a VRS (diVider ReSet) signal coupled to the clock divider for controlling the clock divider to generate the predetermined transition for a cycle of the divided clock signal when the VRS signal is asserted.

Abstract: A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin tunnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin tunnel oxide extends over a substantial portion of the active region and the device. An overlying select and control gate is insulated from the floating gate by an insulating layer. The select and control gate including an elongated extension portion for preventing overprogramming of the circuit. The device is programmed via hot electron injection from the drain end of the channel region to the floating gate, without avalanche breakdown, which allows the cell to be bit-selectable during programming. Erasing is accomplished by electron tunneling from the floating gate to the N-well with the source, drain, and N-well regions equally biased. Since there is no high drain/well junction bias voltage, the channel length of the cell may be reduced without incurring and destructive junction stress.

Abstract: A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin runnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin tunnel oxide extends over a substantial portion of the active region and the device. An overlying control gate is insulated from the floating gate by a first insulating layer. An overlying select gate is insulated from the control gate by an insulating layer. The select gate includes an elongated extension portion for preventing overprogramming of the circuit. The device is programmed via hot electron injection from the drain end of the channel region to the floating gate, without avalanche breakdown, which allows the cell to be bit-selectable during programming. Erasing is accomplished by electron tunneling from the floating gate to the N-well with the source, drain, and N-well regions equally biased.