Patents by Inventor Je-Dong LEE

Je-Dong LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic circuit for filtering signal received from plasma chamber
    Patent number: 11233494
    Abstract: An electronic circuit includes a first filter and a second filter. The first filter passes a first frequency component of a first harmonic frequency generated by a first voltage source to form a potential difference in a chamber and a second frequency component of a second harmonic frequency higher than the first harmonic frequency. The second filter removes the first frequency component and the second frequency component received from the first filter. The second harmonic frequency is included in a first frequency band determined based on a capacitance of the second filter.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: January 25, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyungjoon Kim, Je-Dong Lee, Younghoon Kwon, Myoungwoon Kim, Il-Woo Kim, Jiwoon Im, Jaewon Jung, Hee Jong Jeong
  • ELECTRONIC CIRCUIT FOR FILTERING SIGNAL RECEIVED FROM PLASMA CHAMBER
    Publication number: 20200204143
    Abstract: An electronic circuit includes a first filter and a second filter. The first filter passes a first frequency component of a first harmonic frequency generated by a first voltage source to form a potential difference in a chamber and a second frequency component of a second harmonic frequency higher than the first harmonic frequency. The second filter removes the first frequency component and the second frequency component received from the first filter. The second harmonic frequency is included in a first frequency band determined based on a capacitance of the second filter.
    Type: Application
    Filed: October 4, 2019
    Publication date: June 25, 2020
    Inventors: Hyungjoon KIM, Je-Dong LEE, Younghoon KWON, Myoungwoon KIM, Il-Woo KIM, Jiwoon IM, Jaewon JUNG, Hee Jong JEONG
  • SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    Publication number: 20140306280
    Abstract: In the method, a plurality of gate structures may be formed on a substrate and be spaced apart from each other in a first direction. An insulation layer pattern may be formed by performing a chemical vapor deposition process using SiH4 gas as a source gas. The insulation layer pattern may partially define an air gap between the adjacent gate structures. A width of the air gap in the first direction may be about 65% to about 70% of a distance between the adjacent gate structures.
    Type: Application
    Filed: April 1, 2014
    Publication date: October 16, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je-Dong LEE, Young-Il KIM, Il-Woo KIM, Kwang-Jae LEE, In-Hwa JEON, Sung-Joon HWANG