Abstract: A method of increasing productivity in an organization by sharing praise, encouragement, recognition, and gratitude among members of the organization, wherein the method also provides virtual space for the members to exchange and share inspirational messages.

Abstract: A resist removing composition has an excellent capability for removing a resist, polymer, organometallic polymer and metal oxide and which does not attack underlying layers, and a resist removing method using the same. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and hydrogen peroxide or at least one of a fluoride-based reducing agent and a hydroxide-based reducing agent.

Abstract: A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Abstract: A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Abstract: A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Abstract: A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resist removing agent includes alkoxy N-hydroxyalkyl alkanamide. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, and at least one compound selected from a group consisting of a polar material having a dipole moment of 3 or greater, an attack inhibitor and alkanolamine. A substrate having the resist thereon is brought into contact with the resist removing agent or resist removing composition to remove the resist.

Abstract: A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resist removing agent includes alkoxy N-hydroxyalkyl alkanamide. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, and at least one compound selected from a group consisting of a polar material having a dipole moment of 3 or greater, an attack inhibitor and alkanolamine. A substrate having the resist thereon is brought into contact with the resist removing agent or resist removing composition to remove the resist.

Abstract: A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resist removing agent includes alkoxy N-hydroxyalkyl alkanamide. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, and at least one compound selected from a group consisting of a polar material having a dipole moment of 3 or greater, an attack inhibitor and alkanolamine. A substrate having the resist thereon is brought into contact with the resist removing agent or resist removing composition to remove the resist.

Abstract: A developing device for a semiconductor device fabrication accomplishes complete removal of by-products formed during development of a photoresist, by inverting the wafer over a container of developer and dipping the pattern-forming face into the developer. While the wafer is still inverted over the container, the pattern-forming face is sprayed with a rinse and the wafer is spun to remove the rinse and by-products. The device includes the container provided on a table and supplied with developer, a spin chuck using vacuum suctioning the face of the wafer opposite to the pattern-forming face, a driving motor for rotating the spin chuck, a vertical driver for moving the wafer into and out of the container, and an inverting driver for rotating the spin chuck and the vertical driver so as to selectively turn the pattern-forming face of the wafer to look upward or downward.