Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

Abstract: The present invention relates to a ceramic heater with improved reliability, the ceramic heater including: a heater body having a mesh type high-frequency electrode, and an electrode rod connecting member being in contact with a lower surface of the high-frequency electrode; and a heater support mounted on a lower portion of the heater body and configured to support the heater body, in which the electrode rod connecting member is in area contact with one surface of the high-frequency electrode.

Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

Abstract: The present invention relates to a ceramic heater with improved reliability, comprising: a heater body provided with a high-frequency electrode made of a mesh type metal material, and an electrode rod connecting member that contacts the bottom surface of the high-frequency electrode; and a heater support that is mounted below the heater body and supports the heater body, wherein the high-frequency electrode comprises a first electrode member having a wire type mesh structure and a second electrode member having a sheet type mesh structure.

Abstract: The present disclosure relates to a method for manufacturing a ceramic heater. The method for manufacturing a ceramic heater according to the present disclosure comprises: separately charging a ceramic powder into a center portion and multiple split edge portions in a formation mold and leveling the charged ceramic powder; manufacturing a molded body or pre-sintered body of the ceramic powder from the leveled ceramic powder; disposing a high-frequency electrode or a heating element on the molded body or pre-sintered body of the ceramic powder and filling a second ceramic powder; and integrally sintering the molded body or pre-sintered body of the ceramic powder and the second ceramic powder.

Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

Abstract: A substrate support apparatus includes an upper plate supporting a substrate, a lower plate disposed under the upper plate, an insulating member interposed between the upper plate and the lower plate, an electrode interposed between the upper plate and the insulating member to direct plasma onto the substrate supported by the upper plate, and a heater interposed between the insulating member and the lower plate to heat the substrate supported by the upper plate. The insulating member includes a material having a volume resistance greater than or equal to about 106 ?-cm at a temperature of about 400° C. to about 800° C. so as to reduce a leakage current between the heater and the electrode.