Patents by Inventor Je Hong Kyoung

Je Hong Kyoung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11171628
    Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: November 9, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Sung Sun Kim, Sang Kee Yoon, Chang Hyun Lim, Jin Suk Son, Ran Hee Shin, Je Hong Kyoung
  • Patent number: 11114997
    Abstract: A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: September 7, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Ran Hee Shin, Tae Kyung Lee, Sung Jun Lee, Hwa Sun Lee, Je Hong Kyoung, Sung Sun Kim, Jin Suk Son
  • Publication number: 20210135651
    Abstract: A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer x a concentration (at %) of the dopant]/100 is less than or equal to 80.
    Type: Application
    Filed: May 22, 2020
    Publication date: May 6, 2021
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung LEE, Ran Hee SHIN, Jin Suk SON, Je Hong KYOUNG
  • Patent number: 10892736
    Abstract: A fine dust concentration sensor includes a bulk acoustic resonator and a cap including an upper portion with holes therein and a lateral portion connected to the upper portion to accommodate the bulk acoustic resonator. An upper surface of the upper portion of the cap is coated with a hydrophobic material.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: January 12, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Je Hong Kyoung, Jin Suk Son, Ran Hee Shin, Hwa Sun Lee
  • Publication number: 20210006226
    Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 ? and less than or equal to 1000 ?, or may be thinner than the first electrode.
    Type: Application
    Filed: October 3, 2019
    Publication date: January 7, 2021
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung LEE, Ran Hee SHIN, Jin Suk SON, Je Hong KYOUNG
  • Publication number: 20200395912
    Abstract: A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.
    Type: Application
    Filed: October 2, 2019
    Publication date: December 17, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Tae Kyung LEE, Je Hong KYOUNG, Moon Chul LEE, Jin Suk SON, Ran Hee SHIN, Hwa Sun LEE
  • Patent number: 10812037
    Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the first electrode; and a second electrode disposed on the piezoelectric layer; wherein the first electrode includes an aluminum alloy layer containing scandium (Sc), and has a surface roughness of 2.4 nm or less, based on an arithmetic mean roughness.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: October 20, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Je Hong Kyoung, Tae Kyung Lee, Sung Sun Kim, Jin Suk Son, Ran Hee Shin, Hwa Sun Lee
  • Patent number: 10756701
    Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: August 25, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Ran Hee Shin, Je Hong Kyoung, Hwa Sun Lee, Jin Suk Son, Sung Sun Kim
  • Publication number: 20200266795
    Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).
    Type: Application
    Filed: June 24, 2019
    Publication date: August 20, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Tae Kyung LEE, Je Hong KYOUNG, Sung Sun KIM, Jin Suk SON, Ran Hee SHIN, Hwa Sun LEE
  • Publication number: 20200252046
    Abstract: A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.
    Type: Application
    Filed: May 21, 2019
    Publication date: August 6, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Ran Hee SHIN, Tae Kyung LEE, Sung Jun LEE, Hwa Sun LEE, Je Hong KYOUNG, Sung Sun KIM, Jin Suk SON
  • Patent number: 10715099
    Abstract: A bulk acoustic wave resonator includes a substrate protective layer disposed on a top surface of a substrate, a cavity defined by a membrane layer and the substrate, and a resonating part disposed on the membrane layer. The membrane layer includes a first layer and a second layer, the second layer having the same material as the first layer and having a density greater than that of the first layer.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: July 14, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Je Hong Kyoung, Jin Suk Son, Hwa Sun Lee, Sang Hyun Yi
  • Publication number: 20200204145
    Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the first electrode; and a second electrode disposed on the piezoelectric layer; wherein the first electrode includes an aluminum alloy layer containing scandium (Sc), and has a surface roughness of 2.4 nm or less, based on an arithmetic mean roughness.
    Type: Application
    Filed: May 21, 2019
    Publication date: June 25, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Je Hong KYOUNG, Tae Kyung LEE, Sung Sun KIM, Jin Suk SON, Ran Hee SHIN, Hwa Sun LEE
  • Patent number: 10637435
    Abstract: A bulk acoustic wave resonator includes a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. Either one or both of the first electrode and the second electrode includes an alloy of molybdenum (Mo) and tantalum (Ta).
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: April 28, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Je Hong Kyoung, Jin Suk Son, Hwa Sun Lee, Ran Hee Shin
  • Publication number: 20200112296
    Abstract: A bulk-acoustic wave resonator includes: a substrate; a seed layer disposed on the substrate, and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and the top electrode includes a scandium (Sc)-containing aluminum alloy layer.
    Type: Application
    Filed: April 26, 2019
    Publication date: April 9, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung LEE, Jin Suk SON, Je Hong KYOUNG, Sung Sun KIM, Ran Hee SHIN, Hwa Sun LEE
  • Publication number: 20200036359
    Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.
    Type: Application
    Filed: March 18, 2019
    Publication date: January 30, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Ran Hee SHIN, Tae Kyung LEE, Je Hong KYOUNG, Jin Suk SON, Hwa Sun LEE, Sung Sun KIM
  • Publication number: 20190372554
    Abstract: A fine dust concentration sensor includes a bulk acoustic resonator and a cap including an upper portion with holes therein and a lateral portion connected to the upper portion to accommodate the bulk acoustic resonator. An upper surface of the upper portion of the cap is coated with a hydrophobic material.
    Type: Application
    Filed: October 24, 2018
    Publication date: December 5, 2019
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung LEE, Je Hong KYOUNG, Jin Suk SON, Ran Hee SHIN, Hwa Sun LEE
  • Patent number: 10305446
    Abstract: A piezoelectric oscillator, and method of making the same, includes an oscillation substrate comprising an oscillating part and a surrounding part, wherein the surrounding part is thinner than the oscillating part, and oscillating electrodes disposed on an upper surface and a lower surface of the oscillating part. The oscillation substrate is configured according to H=400.59×S+1.75±1.5, wherein H=100×(T2/T1) and S=T2/(L1?L2), wherein L1 represents an entire length of the oscillation substrate, L2 represents a length of the oscillating part, T1 represents a thickness of the oscillating part, and T2 represents a step height between the oscillating part and the surrounding part.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: May 28, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jae Sang Lee, Ho Phil Jung, Sung Wook Kim, Tae Joon Park, In Young Kang, Dong Joon Oh, Je Hong Kyoung, Kyo Yeol Lee, Jong Pil Lee, Seung Mo Lim
  • Publication number: 20190058451
    Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).
    Type: Application
    Filed: July 19, 2018
    Publication date: February 21, 2019
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung LEE, Ran Hee SHIN, Je Hong KYOUNG, Hwa Sun LEE, Jin Suk SON, Sung Sun KIM
  • Publication number: 20190013792
    Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.
    Type: Application
    Filed: May 7, 2018
    Publication date: January 10, 2019
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung LEE, Sung Sun KIM, Sang Kee YOON, Chang Hyun LIM, Jin Suk SON, Ran Hee SHIN, Je Hong KYOUNG
  • Publication number: 20180351534
    Abstract: An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer and having a hydrophobic layer disposed on at least one of a portion of an upper surface of the cavity and a portion of a lower surface of the cavity; and a resonating portion disposed on the cavity and having a second electrode on a piezoelectric layer on a first electrode.
    Type: Application
    Filed: January 19, 2018
    Publication date: December 6, 2018
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Tae Kyung LEE, Jin Suk SON, Je Hong KYOUNG, Ran Hee SHIN, Sung Sun KIM