Patents by Inventor Je-Hyeon Park

Je-Hyeon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10761680
    Abstract: A display method of a scenario emoticon using an instant message service is provided. The display method includes displaying a scenario emoticon selection region showing at least one thumbnail image of at least one scenario emoticon; receiving an input of a selection upon one from the at least one thumbnail image; and displaying, in response to the selection, a scenario emoticon on a display region within a chat window where an instant message is output. When the play file is played, the at least one object is displayed according to a preset scenario, if a user interaction upon the object is input while the play file is played, a status of the object is changed in response to the user interaction.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: September 1, 2020
    Assignee: KAKAO CORP.
    Inventors: Hee Young Lee, Hyun Ju Park, Ji Hyun Kim, Yong Jin Lee, Jung Hong Choi, Yeon Hee Shin, Hyun Joo Yeon, Joo Hyun Ji, Hui Hyeon Kim, Se Won Hwang, Eu Gene Lim, Hyung Taek Jeong, Jung Gyun Lee, Kwang Hoon Kim, Geon Young Kim, Je Hee Han
  • Patent number: 10734493
    Abstract: A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: August 4, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hauk Han, Je-hyeon Park, Do-hyung Kim, Tae-yong Kim, Keun Lee, Jeong-gil Lee, Hyun-seok Lim
  • Publication number: 20190013388
    Abstract: A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.
    Type: Application
    Filed: July 9, 2018
    Publication date: January 10, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hauk Han, Je-Hyeon Park, Do-hyung Kim, Tae-yong Kim, Keun Lee, Jeong-gil Lee, Hyun-seok Lim
  • Publication number: 20180358379
    Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 13, 2018
    Inventors: Hauk HAN, Je-Hyeon PARK, Kihyun YOON, Changwon LEE, HyunSeok LIM, Jooyeon HA
  • Patent number: 10079245
    Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: September 18, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hauk Han, Je-Hyeon Park, Kihyun Yoon, Changwon Lee, HyunSeok Lim, Jooyeon Ha
  • Publication number: 20170062470
    Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.
    Type: Application
    Filed: August 26, 2016
    Publication date: March 2, 2017
    Inventors: Hauk HAN, Je-Hyeon PARK, Kihyun YOON, Changwon LEE, HyunSeok LIM, Jooyeon HA
  • Patent number: 8955903
    Abstract: A roll blind for a vehicle, including: a guide frame formed in an inner circumference of an opening formed in a sun roof of the vehicle; a fixing shaft fixed to either of anterior and posterior areas of the vehicle on the guide frame; an opening shaft disposed on the other one of the anterior and posterior areas to which the fixing shaft is fixed; a blind disposed to selectively cover the opening according to a sliding operation of the opening shaft; and a pressing unit disposed between the fixing shaft and the opening shaft, sliding along the guide frame, rolling a central portion of the blind upward from an upper side of the blind in right and left directions of the vehicle, simultaneously wrapping two sides of the blind and simultaneously providing tension to the blind that moves from the anterior and posterior areas.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: February 17, 2015
    Assignee: Webasto Donghee Holdings Co., Ltd.
    Inventors: Je-Hyeon Park, Seung-Min Yun, Eun-Bum Kim, Myung-Kwon Jang
  • Patent number: 8679920
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: March 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hauk Han, Byoung-Kyu Lee, Jingi Hong, Changwon Lee, Eungjoon Lee, Je-Hyeon Park, Jeonggil Lee
  • Patent number: 8563429
    Abstract: Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NF3 and NH3, HF and NH3, and N2, H2, and NF3, dissociating the etchant source, forming an etchant of NH4F and NH4F.HF through the dissociation, producing solid by-products of (NH4)2SiF6 through the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF4, NH3, and HF.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: October 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-Goo Hur, Kyu-Tae Na, Min Kim, Hyun-Young Kim, Je-Hyeon Park
  • Publication number: 20130187403
    Abstract: The present invention provides a roll blind for a vehicle, comprising: a guide frame formed in an inner circumference of an opening formed in a sun roof of the vehicle; a fixing shaft fixed to either of anterior and posterior areas of the vehicle on the guide frame; an opening shaft disposed on the other one of the anterior and posterior areas of the vehicle to which the fixing shaft is fixed, the opening shaft sliding along the guide frame in a forward/backward direction of the vehicle; a blind, of which both ends are fixed to the opening shaft and the fixing shaft and which is disposed to selectively cover the opening according to a sliding operation of the opening shaft; and a pressing unit disposed between the fixing shaft and the opening shaft, sliding along the guide frame, rolling a central portion of the blind upward from an upper side of the blind in right and left directions of the vehicle, simultaneously wrapping two sides of the blind and simultaneously providing tension to the blind that moves fr
    Type: Application
    Filed: March 15, 2011
    Publication date: July 25, 2013
    Inventors: Je-Hyeon Park, Seung-Min Yun, Eun-Bum Kim, Myung-Kwon Jang
  • Publication number: 20120094453
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 19, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hauk Han, Byoung-Kyu Lee, Jingi Hong, Changwon Lee, Eungjoon Lee, Je-Hyeon Park, Jeonggil Lee
  • Publication number: 20100210099
    Abstract: Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NF3 and NH3, HF and NH3, and N2, H2, and NF3, dissociating the etchant source, forming an etchant of NH4F and NH4F.HF through the dissociation, producing solid by-products of (NH4)2SiF6 through the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF4, NH3, and HF.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 19, 2010
    Inventors: Won-Goo Hur, Kyu-Tae Na, Min Kim, Hyun-Young Kim, Je-Hyeon Park
  • Publication number: 20080179746
    Abstract: A wiring structure of a semiconductor device comprises an insulating interlayer, a plug and a conductive pattern. The insulating interlayer has an opening therethrough on a substrate. The plug includes tungsten and fills up the opening. The plug is formed by a deposition process using a reaction of a source gas. A conductive pattern structure makes contact with the plug and includes a first tungsten layer pattern and a second tungsten layer pattern. The first tungsten layer pattern is formed by the deposition process. The second tungsten layer pattern is formed by a physical vapor deposition (PVD) process.
    Type: Application
    Filed: January 22, 2008
    Publication date: July 31, 2008
    Inventors: Won-Goo Hur, Dong-Kyun Park, Je-Hyeon Park, Young-Joo Cho, Kyu-Tae Na