Patents by Inventor Je-Hyung Ryu

Je-Hyung Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices with shaped portions of elevated source/drain regions
    Patent number: 10840374
    Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: November 17, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chung-Hwan Shin, Sang-Bom Kang, Dae-Yong Kim, Jeong-Ik Kim, Chul-Sung Kim, Je-Hyung Ryu, Sang-Woo Lee, Hyo-Seok Choi
  • SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN REGIONS
    Publication number: 20180331218
    Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
    Type: Application
    Filed: July 3, 2018
    Publication date: November 15, 2018
    Inventors: Chung-Hwan Shin, Sang-Bom Kang, Dae-Yong Kim, Jeong-lk Kim, Chul-Sung Kim, Je-Hyung Ryu, Sang-Woo Lee, Hyo-Seok Choi
  • Semiconductor devices with shaped portions of elevated source/drain regions
    Patent number: 10043902
    Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
    Type: Grant
    Filed: December 9, 2015
    Date of Patent: August 7, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chung-Hwan Shin, Sang-Bom Kang, Dae-Yong Kim, Jeong-Ik Kim, Chul-Sung Kim, Je-Hyung Ryu, Sang-Woo Lee, Hyo-Seok Choi
  • SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN REGIONS
    Publication number: 20160233334
    Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
    Type: Application
    Filed: December 9, 2015
    Publication date: August 11, 2016
    Inventors: Chung-Hwan Shin, Sang-Bom Kang, Dae-Yong Kim, Jeong-Ik Kim, Chul-Sung Kim, Je-Hyung Ryu, Sang-Woo Lee, Hyo-Seok Choi
  • Methods of forming semiconductor devices with metal silicide using pre-amorphization implants
    Patent number: 9240323
    Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: January 19, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chung-Hwan Shin, Sang-Bom Kang, Dae-Yong Kim, Jeong-Ik Kim, Chul-Sung Kim, Je-Hyung Ryu, Sang-Woo Lee, Hyo-Seok Choi
  • METHODS OF FORMING SEMICONDUCTOR DEVICES WITH METAL SILICIDE USING PRE-AMORPHIZATION IMPLANTS AND DEVICES SO FORMED
    Publication number: 20130316535
    Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
    Type: Application
    Filed: March 7, 2013
    Publication date: November 28, 2013
    Inventors: Chung-Hwan Shin, Sang-Bom Kang, Dae-Yong Kim, Jeong-Ik Kim, Chul-Sung Kim, Je-Hyung Ryu, Sang-Woo Lee, Hyo-Seok Choi