Abstract: A system includes a computation circuit, a memory array operably coupled with the computation circuit, and a controller configured to input a plurality of input data bits to the computation circuit, identify a number of accumulation associated with the plurality of input data bits, based on the number of accumulation, determine whether to enable or disable at least one component of the computation circuit, and based on a determination to enable or disable, generate a control signal to enable or disable the at least one component of the computation circuit.

Abstract: A memory device may comprise a memory array, a first computing unit, and a second computing unit. The memory array may comprise a plurality of memory cells to store weights for a neural network. The first computing unit can be configured to receive the stored weights from the plurality of memory cells, and to generate a first partial sum according to the stored weights. The second computing unit can be configured to receive the stored weights from the plurality of memory cells and the first partial sum, and to generate a second partial sum according to the stored weights and the first partial sum. The second computing unit can be sequentially coupled to the first computing unit.

Abstract: A memory circuit includes a Booth encoder configured to receive a first data element including a first sign portion and a first data portion. The memory circuit includes a Booth decoder configured to receive a second data element including a second sign portion and a second data portion, and provide a product based on the first data element and the second data element. The memory circuit includes a plurality of multiplexers operatively coupled between the Booth encoder and the Booth decoder. The plurality of multiplexers are configured to receive a plurality of encoded signals from the Booth encoder and to change respective logic states of the plurality of encoded signals based on the first sign portion and the second sign portion, causing the Booth decoder to provide the product.

Abstract: A system, circuit, and method of operation of the system and circuit are disclosed. In one aspect, a device includes a computation circuit, a memory array, and a controller. The controller can determine that one or more input data bits to the computation circuit or one or more memory bits provided from the memory array are all in a first logic state. In response to determining that the one or more input data bits or the one or more memory bits are all in the first logic state, the controller can generate a control signal to disable at least one component of the computation circuit.

Abstract: A memory device that includes a memory array and a pre-charge selecting circuit is introduced. The memory array includes a plurality of memory cells that are coupled to a plurality of bit lines and a plurality of word lines, wherein the plurality of word lines are configured to receive an input vector. The pre-charge selecting circuit is configured to selectively pre-charge a selected bit line according to a value of the input vector. The pre-charge selecting circuit is configured to determine whether the value of the input vector is less than a predefined threshold, and generate a gated pre-charge signal to skip pre-charging the selected bit line in response to determining that the value of the input vector is less than the predefined threshold.

Abstract: An Input/Output (I/O) circuit for a memory device is provided. The I/O circuit includes a charge integration circuit coupled to a bitline of the memory device. The charge integration circuit provides a sensing voltage based on a decrease of a voltage on the bitline. A comparator is coupled to the charge integration circuit. The comparator compares the sensing voltage with a reference voltage and provides an output voltage based on the comparison. A time-to-digital converter coupled to the comparator. The time to digital convertor converts a time associated with the output voltage to a digital value.

Abstract: An Input/Output (I/O) circuit for a memory device is provided. The I/O circuit includes a charge integration circuit coupled to a bitline of the memory device. The charge integration circuit provides a sensing voltage based on a decrease of a voltage on the bitline. A comparator is coupled to the charge integration circuit. The comparator compares the sensing voltage with a reference voltage and provides an output voltage based on the comparison. A time-to-digital converter coupled to the comparator. The time-to-digital convertor converts a time associated with the output voltage to a digital value.

Abstract: A memory device that includes a memory array and a pre-charge selecting circuit is introduced. The memory array includes a plurality of memory cells that are coupled to a plurality of bit lines and a plurality of word lines, wherein the plurality of word lines are configured to receive an input vector. The pre-charge selecting circuit is configured to selectively pre-charge a selected bit line according to a value of the input vector. The pre-charge selecting circuit is configured to determine whether the value of the input vector is less than a predefined threshold, and generate a gated pre-charge signal to skip pre-charging the selected bit line in response to determining that the value of the input vector is less than the predefined threshold.

Abstract: A method, device, and system for performing a partial sum accumulation of a product of input vectors and weight vectors in a wordwise-input and bitwise-weight manner results in a partial accumulated product sum. The partial accumulated product sum is compared with a threshold condition after each weight bit, and when the partial accumulated product sum meets the threshold condition, a skip indicator is asserted to indicate that remaining computations of a sum accumulation are skipped.

Abstract: A memory structure with input-aware maximum multiply-and-accumulate value zone prediction for computing-in-memory applications includes a memory array, an input-aware zone prediction circuit and an analog-to-digital converter. An input-aware maximum partial multiply-and-accumulate value voltage generator is configured to generate a maximum partial multiply-and-accumulate value according to at least one input value. A prediction-aware global reference voltage generator is configured to generate a plurality of global reference voltages, a maximum reference voltage and a selected minimum reference voltage. A maximum partial multiply-and-accumulate value zone detector is configured to generate a zone switch signal by comparing the maximum partial multiply-and-accumulate value and the global reference voltages.