Abstract: Embodiments of the present disclosure provide a display panel including: an overcoat layer disposed on a light emitting element layer and having a first refractive index; and a cover window disposed on the overcoat layer and having a second refractive index greater than the first refractive index, wherein at least one of the overcoat layer and the cover window includes a plurality of inclined surfaces, and inclination angles of the plurality of inclined surfaces in a central area are different from those in an edge area. The display panel, the manufacturing method thereof, and the head-mounted display device including the same according to the embodiments of the present disclosure May control the angle of emitted light.

Abstract: A display device includes a first substrate including a first area, a second area, and a bending area that is between the first area and the second area, and including a second inclined surface facing the bending area, a light-emitting element at the first area, and a first bending-protection layer at the first area and the second area, not overlapping the bending area, and including a first inclined surface facing the bending area and aligned with the second inclined surface.

Abstract: A display device including a first substrate including a display area and a non-display area surrounding the display area, a second substrate disposed on the first substrate, a display element layer disposed on the second substrate and overlapping the display area, a first encapsulation layer disposed on the display element layer, overlapping the non-display area, and including an inorganic material, and a second encapsulation layer disposed on the first encapsulation layer, including a concavo-convex structure, and including an inorganic material. The first substrate includes a first surface overlapping an edge portion of the first substrate and facing the second substrate, and a first inclined surface extended to the first surface. An inclination angle formed by the first surface and the first inclined surface is an obtuse angle, and the first inclined surface overlaps the second encapsulation layer in a direction perpendicular to the first substrate.

Abstract: A display device includes a display panel, which includes a first area including a display area, a second area spaced apart from the first area in a first direction, and a third area located between the first area and the second area and configured to bend, a first substrate including a rigid material, a second substrate disposed on the first substrate and including a flexible material, a protective layer disposed on the second substrate and overlapping the third area, and an alignment mark disposed on the first substrate, a cutting area that overlaps the third area, wherein a portion of the second substrate and a portion of the protective layer are removed from the cutting area, wherein the first substrate at least partially overlaps the cutting area, and wherein the alignment mark is disposed where the first substrate and the cutting area overlap each other.

Abstract: There is provided a display device including a second substrate corresponding to a main area, a pad area, and a bending area between the main area and the pad area, a first substrate at the main area and at the pad area and beneath the second substrate, and a display element layer at the main area and above the second substrate, wherein the first substrate includes a first sub-substrate overlapped with the main area, and including a first surface adjacent the second substrate, a second surface opposite to the first surface, and a first side directed toward the bending area, and a second sub-substrate spaced apart from the first sub-substrate and overlapped with the pad area, wherein a first inclined angle formed by the second surface and the first side is an obtuse angle.

Abstract: A display device includes a first substrate including a first surface and a second surface, which are opposite to each other, where the first substrate includes a rigid material, a second substrate disposed on the first surface of the first substrate, where the second substrate includes a flexible material, and a plurality of light-emitting elements disposed on the second substrate, where the first substrate further include first side surfaces disposed between the first and second surfaces, and first inclined surfaces disposed between the first surface and the first side surfaces, where the first side surfaces and the first inclined surfaces are at edges of the first substrate in a bending area where the second substrate is bent, and the display device further includes a filler disposed between a bottom surface of the second substrate and the first side surfaces of the first substrate, in the bending area.

Abstract: The present disclosure provides: a compound of a specific chemical structure, having excellent activity with respect to BTK degradation; or a pharmaceutically acceptable salt thereof. The present disclosure also provides a composition comprising the compound or pharmaceutically acceptable salts thereof. The present disclosure also provides are pharmaceutical use for treating or preventing BTK-associated diseases (for example, autoimmune diseases or cancer) of the compound, the salt thereof, and the composition comprising same according to the present disclosure. The present disclosure also provides a method for treating or preventing BTK-associated diseases (for example, autoimmune diseases or cancer), comprising administering, to a subject requiring treatment, an effective amount of the compound, the salt thereof, or the composition comprising same according to the present disclosure.

Abstract: Provided is a method for prevention or treatment of a lysosomal storage disorder, and more particularly, to a method that may exhibit excellent efficacy against various lysosomal storage disorders including Niemann-Pick disease by including graphene quantum dots.

Abstract: Provided is a graphene quantum dot as a therapeutic agent for diseases associated with abnormal fibrillation or aggregation of neuroproteins. The graphene quantum dot according to the presently claimed subject matter suppresses ?-syn fibrillation or disaggregates already formed ?-syn fibrils, and shows the working effect of passing through the blood brain barrier (BBB). Therefore, the graphene quantum dot according to the presently claimed subject matter can be advantageously used as a therapeutic agent for diseases associated with abnormal fibrillation and aggregation of neuroproteins, such as neurodegenerative diseases, inflammatory diseases, and metabolic diseases.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: The present disclosure relates to a pharmaceutical composition for preventing or treating neurodegenerative diseases, the pharmaceutical composition including a graphene nanostructure as an active ingredient.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.

Abstract: A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

Abstract: A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.

Abstract: The present disclosure relates to a pharmaceutical composition for preventing or treating neurodegenerative diseases, the pharmaceutical composition including a graphene nanostructure as an active ingredient.