Abstract: A display device includes: a first substrate having a first surface, a second surface opposite to the first surface, and a first side surface extending between the first surface and the second surface, the first substrate comprises a rigid material; a second substrate on the first surface of the first substrate and including a flexible material, the second substrate covering at least a part of the first side surface of the first substrate; and an emission material layer on the second substrate and including a plurality of light-emitting elements.

Abstract: A display device and method of manufacturing a display device. The display device includes a first electrode, a second electrode facing the first electrode, a first insulating layer on the first electrode and the second electrode and between the first electrode and the second electrode, a light emitting element on the first insulating layer, a second insulating layer covering the light emitting element and exposing end portions of the light emitting element, a third insulating layer on the second insulating layer, a first contact electrode electrically connected to the first electrode, on the third insulating layer and in contact with a first end portion of the light emitting element exposed by the second insulating layer, and a second contact electrode electrically connected to the second electrode, on the third insulating layer and in contact with a second end portion of the light emitting element exposed by the second insulating layer.

Abstract: A display device including a first substrate including a first area, a second area and a bending area between the first area and the second area; a display element layer disposed on the first area of the first substrate; multiple signal lines disposed on the bending area of the first substrate, the signal lines being spaced apart from one another in a first direction and electrically connected to the display element layer; and a bending protection layer disposed on the bending area of the first substrate and covering the signal lines, wherein the bending protection layer includes a first portion and a second portion, the first portion has an inclined surface, the second portion having an approximately flat surface, the second portion overlapping the signal lines including outermost signal lines, the first portion not overlapping the signal lines.

Abstract: A light emitting device includes first and second electrodes disposed on a substrate; an insulating layer disposed on the substrate and including a groove extending in a first direction intersecting with the first and the second electrodes, and first and second contact portions that expose areas of the first and the second electrodes; light emitting elements disposed in the groove between the first and the second electrodes, each including first and second ends electrically connected to the first and second electrodes, respectively; a first contact electrode electrically connected to the light emitting elements on the first ends, and electrically connected to the first electrode on the first contact portion; and a second contact electrode electrically connected to the light emitting elements on the second ends, and electrically connected to the second electrode on the second contact portion.

Abstract: A display device includes: a substrate comprising an open portion; a pad portion on the substrate and exposed through the open portion; a fanout line integrally formed with the pad portion; a data line electrically connected to the fanout line; a flexible film under the substrate and comprising a lead electrode inserted into the open portion of the substrate to directly contact the pad portion; and a contact portion covering a lower surface of the lead electrode and a lower surface of the pad portion to electrically connect the lead electrode and the pad portion.

Abstract: Provided are a display device and a manufacturing method thereof. The display device comprises: a substrate; a first electrode and a second electrode disposed on the substrate to be spaced apart from each other; a first insulating layer disposed on the substrate so as to cover at least a portion of the first electrode and the second electrode; and at least one first light emitting element disposed between the first electrode and the second electrode, on the first insulating layer. The first insulating layer comprises: a first sub-insulating layer comprising a first portion including a hydrophilic material and a second portion which is a region of the first insulating layer except for the first portion and includes a hydrophobic material; and a second sub-insulating layer disposed below the first sub-insulating layer, and at least a portion of the at least one first light emitting element is disposed on the first portion.

Abstract: The present invention relates to a novel heterocyclic compound and a composition, for preventing or treating a cancer, an autoimmune disease, and an inflammatory disease, comprising same. The novel heterocyclic compound of the present invention is a bifunctional compound having a Bruton's tyrosine kinase (BTK) degradation function via a ubiquitin proteasome pathway, and may be utilized as a composition for preventing or treating a cancer, an autoimmune disease, and Parkinson's disease.

Abstract: A display device and a method of manufacturing a display device are provided.

Abstract: A light emitting device includes first and second electrodes disposed on a substrate; an insulating layer disposed on the substrate and including a groove extending in a first direction intersecting with the first and the second electrodes, and first and second contact portions that expose areas of the first and the second electrodes; light emitting elements disposed in the groove between the first and the second electrodes, each including first and second ends electrically connected to the first and second electrodes, respectively; a first contact electrode electrically connected to the light emitting elements on the first ends, and electrically connected to the first electrode on the first contact portion; and a second contact electrode electrically connected to the light emitting elements on the second ends, and electrically connected to the second electrode on the second contact portion.

Abstract: Provided is a method for prevention or treatment of a lysosomal storage disorder, and more particularly, to a method that may exhibit excellent efficacy against various lysosomal storage disorders including Niemann-Pick disease by including graphene quantum dots.

Abstract: Provided is a graphene quantum dot as a therapeutic agent for diseases associated with abnormal fibrillation or aggregation of neuroproteins. The graphene quantum dot according to the presently claimed subject matter suppresses ?-syn fibrillation or disaggregates already formed ?-syn fibrils, and shows the working effect of passing through the blood brain barrier (BBB). Therefore, the graphene quantum dot according to the presently claimed subject matter can be advantageously used as a therapeutic agent for diseases associated with abnormal fibrillation and aggregation of neuroproteins, such as neurodegenerative diseases, inflammatory diseases, and metabolic diseases.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: The present disclosure relates to a pharmaceutical composition for preventing or treating neurodegenerative diseases, the pharmaceutical composition including a graphene nanostructure as an active ingredient.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Abstract: A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.

Abstract: A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.