Patents by Inventor Je Won Kim
Je Won Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160125804Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.Type: ApplicationFiled: August 13, 2015Publication date: May 5, 2016Inventors: Nam Goo CHA, Young Soo PARK, Sung Hyun SIM, Je Won KIM
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Patent number: 9321477Abstract: A rack bar support device supports a rack bar of a steering device of a vehicle toward a pinion shaft, and includes a rack bearing which is disposed opposite the pinion to contact the rack bar and a biasing assembly providing a force of pushing the rack bearing along a biasing axis toward the rack bar to urge the rack bearing to push the rack bar is engaged with the pinion shaft. The biasing assembly includes an adjustment plug, an adjustment assembly and a support plate assembly. The support plate assembly includes a support plate which is movably disposed between the adjustment member and the rack bearing in a state of being supported by the adjustment member, and a gap is formed between the support plate and the rack bearing.Type: GrantFiled: September 6, 2012Date of Patent: April 26, 2016Assignee: ERAE AUTOMOTIVE SYSTEMS CO., LTD.Inventors: Seong-Hun Bae, Chang-Wook Son, Chung-Shin Lee, Jin-Woong Lee, Je-Won Kim
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Publication number: 20160049553Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.Type: ApplicationFiled: August 17, 2015Publication date: February 18, 2016Inventors: Sung Hyun SIM, Geon Wook YOO, Mi Hyun KIM, Dong Hoon LEE, Jin Bock LEE, Je Won KIM, Hye Seok NOH, Dong Kuk LEE
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Patent number: 9166098Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: GrantFiled: December 18, 2008Date of Patent: October 20, 2015Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Publication number: 20150221823Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.Type: ApplicationFiled: October 13, 2014Publication date: August 6, 2015Inventors: Sung Won HWANG, Je Won KIM, Il Ho AHN, Soo Jeong CHOI
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Patent number: 9076928Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.Type: GrantFiled: May 30, 2013Date of Patent: July 7, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong Seok Yang, Ki Seok Kim, Je Won Kim, Ju Bin Seo, Sang Seok Lee, Joon Sub Lee, Jin Bock Lee
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Patent number: 8946751Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.Type: GrantFiled: August 30, 2013Date of Patent: February 3, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Bock Lee, Ki Seok Kim, Je Won Kim, Ju-Bin Seo, Seong Seok Yang, Sang Seok Lee, Joon Sub Lee
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Publication number: 20150020619Abstract: A rack bar supporting device is a device for supporting a rack bar of a steering apparatus of a vehicle toward a pinion shaft and includes a rack bearing and a biasing assembly. The biasing assembly includes an adjustment plug, an adjustment assembly and a support plate assembly. The adjustment assembly includes an adjustment member and a first biasing member. The support plate assembly includes a first support plate, a second support plate, a second biasing member which provides a force for pushing the first support plate along the biasing axis against the second support plate, and a connection structure which connects the first and the second support plates together so as to restrict movement of the second plate in a direction away from the rack bearing.Type: ApplicationFiled: March 4, 2013Publication date: January 22, 2015Applicant: KOREA DELPHI AUTOMOTIVE SYSTEMS CORPORATIONInventors: Chang-Wook Son, Seong-Hun Bae, Min-Young Choi, Jin-Woong Lee, Je-Won Kim
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Publication number: 20140260719Abstract: A rack bar support device supports a rack bar of a steering device of a vehicle toward a pinion shaft, and includes a rack bearing which is disposed opposite the pinion to contact the rack bar and a biasing assembly providing a force of pushing the rack bearing along a biasing axis toward the rack bar to urge the rack bearing to push the rack bar is engaged with the pinion shaft. The biasing assembly includes an adjustment plug, an adjustment assembly and a support plate assembly. The support plate assembly includes a support plate which is movably disposed between the adjustment member and the rack bearing in a state of being supported by the adjustment member, and a gap is formed between the support plate and the rack bearing.Type: ApplicationFiled: September 6, 2012Publication date: September 18, 2014Applicant: KOREA DELPHI AUTOMOTIVE SYSTEMS CORPORATIONInventors: Seong-Hun Bae, Chang-Wook Son, Chung-Shin Lee, Jin-Woong Lee, Je-Won Kim
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Publication number: 20140198528Abstract: There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.Type: ApplicationFiled: August 17, 2011Publication date: July 17, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Yong Tae KIim, Tomio Inoue, Je Won Kim, Tsuyoshi Tsutsui, Jong Ho Lee, Seung Wan Chae
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Publication number: 20140191192Abstract: There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.Type: ApplicationFiled: July 29, 2011Publication date: July 10, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon Han, Hyun Wook Shim, Je Won Kim, Chu Young Cho, Seong Ju Park, Sung Tae Kim, Jin Tae Kim, Yong Chun Kim, Sang Jun Lee
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Publication number: 20140191194Abstract: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.Type: ApplicationFiled: August 9, 2011Publication date: July 10, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok Min Hwang, Jae Ho Han, Jae Yoon Kim, Hae Soo Ha, Su Yeol Lee, Je Won Kim
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Publication number: 20140183589Abstract: There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.Type: ApplicationFiled: August 9, 2011Publication date: July 3, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Ho Han, Sung Tae Kim, Seung Wan Chae, Jong Ho Lee, Je Won Kim
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Publication number: 20140131759Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.Type: ApplicationFiled: July 29, 2011Publication date: May 15, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Yoon Kim, Je Won Kim, Jin Bock Lee, Seok Min Hwang, Hae Soo Ha, Su Yeol Lee
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Publication number: 20140103359Abstract: A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.Type: ApplicationFiled: July 28, 2011Publication date: April 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Wook Shim, Sang Heon Han, Jae Woong Han, Dong Chul Shin, Je Won Kim, Dong Ju Lee
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Publication number: 20140070252Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.Type: ApplicationFiled: August 30, 2013Publication date: March 13, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: JIN BOCK LEE, Ki Seok Kim, Je Won Kim, Ju-Bin Seo, Seong-Seok Yang, Sang Seok Lee, Joon Sub Lee
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Publication number: 20140070244Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.Type: ApplicationFiled: November 15, 2013Publication date: March 13, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Je Won KIM, Tae Sung JANG, Jong Gun WOO, Jong Ho LEE
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Publication number: 20140045288Abstract: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.Type: ApplicationFiled: August 13, 2013Publication date: February 13, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Seok KIM, Je Won KIM, Ju Bin SEO, Seong Seok YANG, Sang Seok LEE, Joon Sub LEE, Jin Bock LEE
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Patent number: 8643037Abstract: There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.Type: GrantFiled: April 6, 2012Date of Patent: February 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun Wook Shim, Suk Ho Yoon, Tan Sakong, Je Won Kim, Ki Sung Kim
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Patent number: 8637897Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.Type: GrantFiled: February 25, 2011Date of Patent: January 28, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Je Won Kim, Tae Sung Jang, Jong Gun Woo, Jong Ho Lee