Abstract: An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.

Abstract: Disclosed are quantum dots based on a graded multishell structure and a method of manufacturing the same. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core, inter shells surrounding the core, and an outer shell surrounding the inter shells, wherein the concentrations of compounds composing the inter shells are changed stepwise from the core to the outer shell.

Abstract: A coupled via structure includes a plate via penetrating through an board body and having first and second plates spaced apart from each other by a first gap distance, a contact pad connected to the plate via on a surface of the board body and having first and second contacts connected to the first and second plates, respectively, and a connection line connected to the contact pad on the surface of the board body and having first and second lines connected to the first and second contacts, respectively, and spaced apart from the first line by a second gap distance. Accordingly, the deviation of the characteristic impedance is reduced (or, alternatively, minimized) between the coupled via structure and the coupled signal line.

Abstract: A coupled via structure includes a plate via penetrating through an board body and having first and second plates spaced apart from each other by a first gap distance, a contact pad connected to the plate via on a surface of the board body and having first and second contacts connected to the first and second plates, respectively, and a connection line connected to the contact pad on the surface of the board body and having first and second lines connected to the first and second contacts, respectively, and spaced apart from the first line by a second gap distance. Accordingly, the deviation of the characteristic impedance is reduced (or, alternatively, minimized) between the coupled via structure and the coupled signal line.

Abstract: A coupled via structure includes a plate via penetrating through an board body and having first and second plates spaced apart from each other by a first gap distance, a contact pad connected to the plate via on a surface of the board body and having first and second contacts connected to the first and second plates, respectively, and a connection line connected to the contact pad on the surface of the board body and having first and second lines connected to the first and second contacts, respectively, and spaced apart from the first line by a second gap distance. Accordingly, the deviation of the characteristic impedance is reduced (or, alternatively, minimized) between the coupled via structure and the coupled signal line.

Abstract: A coupled via structure includes a plate via penetrating through an board body and having first and second plates spaced apart from each other by a first gap distance, a contact pad connected to the plate via on a surface of the board body and having first and second contacts connected to the first and second plates, respectively, and a connection line connected to the contact pad on the surface of the board body and having first and second lines connected to the first and second contacts, respectively, and spaced apart from the first line by a second gap distance. Accordingly, the deviation of the characteristic impedance is reduced (or, alternatively, minimized) between the coupled via structure and the coupled signal line.

Abstract: A memory module includes a plurality of buses. A plurality of memory chips is mounted on a module board and is connected to a first node, a second node, and a plurality of third nodes of the plurality of buses. The first node, the second node, and the third nodes branch off to a first memory chip, a second memory chip, and the third memory chips, respectively. A length of the plurality of buses between the first and second nodes is longer than a length of the plurality of buses between adjacent nodes from among the second node and the third nodes.

Abstract: A data receiver includes a first buffer circuit and a second buffer circuit. The first buffer circuit varies a resistance of a data path and a resistance of a reference voltage path based on a plurality of control signals, and adjusts a voltage level of an input data signal and a level of a reference voltage to generate an internal data signal and an internal reference voltage based on the varied resistance of the data path and the varied resistance of the reference voltage path. The second buffer circuit compares the internal data signal with the internal reference voltage to generate a data signal.

Abstract: A data receiver includes a first buffer circuit and a second buffer circuit. The first buffer circuit varies a resistance of a data path and a resistance of a reference voltage path based on a plurality of control signals, and adjusts a voltage level of an input data signal and a level of a reference voltage to generate an internal data signal and an internal reference voltage based on the varied resistance of the data path and the varied resistance of the reference voltage path. The second buffer circuit compares the internal data signal with the internal reference voltage to generate a data signal.

Abstract: A memory module, includes a memory module board and a plurality of memory devices on the memory module board. The memory module board includes one or more first input terminals configured to receive first signals to individually control the memory devices, and one or more second input terminals configured to receive second signals to commonly control the memory devices. Each of the memory devices includes a plurality of first signal input units configured to receive the first signals through one or more first input pins, a plurality of second signal input units configured to receive the second signals through one or more second input pins, and a plurality of dummy units, the dummy units being respectively connected to the first signal input units in parallel, and being configured to receive the first signals through one or more third input pins and to compensate for a signal line load.

Abstract: A method of forming an integrated circuit module may include interposing an auxiliary PCB between at least one semiconductor chip and a main PCB, the auxiliary PCB having at least one circuit pattern for electrical connection to one of the semiconductor chip and at least one circuit pattern formed on the main PCB.

Abstract: A memory module socket disposed on a principal surface of a mainboard, and adapted to mechanically receive and electrically connect a memory module with a mainboard, the memory module socket including a first unit socket having a plurality of first socket pins adapted to electrically connect a first connector disposed on an edge of the memory module, and a second unit socket having a plurality of second socket pins adapted to electrically connect to a second connector disposed on the memory module orthogonal to the first connector, wherein the memory module as installed in the memory module socket is parallel to the principal surface of the mainboard.

Abstract: A memory module, includes a memory module board and a plurality of memory devices on the memory module board. The memory module board includes one or more first input terminals configured to receive first signals to individually control the memory devices, and one or more second input terminals configured to receive second signals to commonly control the memory devices. Each of the memory devices includes a plurality of first signal input units configured to receive the first signals through one or more first input pins, a plurality of second signal input units configured to receive the second signals through one or more second input pins, and a plurality of dummy units, the dummy units being respectively connected to the first signal input units in parallel, and being configured to receive the first signals through one or more third input pins and to compensate for a signal line load.

Abstract: A memory module socket disposed on a principal surface of a mainboard, and adapted to mechanically receive and electrically connect a memory module with a mainboard, the memory module socket including a first unit socket having a plurality of first socket pins adapted to electrically connect a first connector disposed on an edge of the memory module, and a second unit socket having a plurality of second socket pins adapted to electrically connect to a second connector disposed on the memory module orthogonal to the first connector, wherein the memory module as installed in the memory module socket is parallel to the principal surface of the mainboard.

Abstract: A memory module socket disposed on a principal surface of a mainboard, and adapted to mechanically receive and electrically connect a memory module with a mainboard, the memory module socket including a first unit socket having a plurality of first socket pins adapted to electrically connect a first connector disposed on an edge of the memory module, and a second unit socket having a plurality of second socket pins adapted to electrically connect to a second connector disposed on the memory module orthogonal to the first connector, wherein the memory module as installed in the memory module socket is parallel to the principal surface of the mainboard.

Abstract: Embodiments of the invention provide memory module having an improved arrangement of discrete devices. In one embodiment, the invention provides a memory module comprising a board; a plurality of tabs disposed adjacent to a first edge of the board and disposed on a first surface of the board; and a memory pad region disposed on the first surface and comprising memory chip pads, wherein each memory chip pad is electrically connected to at least one of the tabs. The memory module further comprises discrete devices corresponding to the memory pad region, wherein the discrete devices corresponding to the memory pad region are disposed on only one side of the memory pad region. In the memory module, each of the discrete devices is electrically connected to at least one of the tabs and at least one of the memory chip pads.

Abstract: A method of forming an integrated circuit module may include interposing an auxiliary PCB between at least one semiconductor chip and a main PCB, the auxiliary PCB having at least one circuit pattern for electrical connection to one of the semiconductor chip and at least one circuit pattern formed on the main PCB.