Patents by Inventor Jea-Myung Baek

Jea-Myung Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodiode detector and fabrication method thereof
    Patent number: 6780532
    Abstract: Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: August 24, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Kee Yang, Jea-Myung Baek
  • Photodiode detector and fabrication method thereof
    Publication number: 20030129781
    Abstract: Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 10, 2003
    Inventors: Seung-Kee Yang, Jea-Myung Baek