Abstract: A paste for a reference electrode according to an embodiment of the present disclosure includes silver chloride powder and a carbon-based conductive material. The carbon-based conductive material may include at least one compound selected from the group consisting of carbon nanotubes, graphite, graphene, and carbon black. The reference electrode formed of the paste for a reference electrode according to an exemplary embodiment may provide improved mechanical properties and electrochemical properties.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Disclosed are an electronic apparatus capable of applying the design of a UI component based on the device's usage environment and the operating method thereof. The present invention presents an electronic apparatus capable of dynamically changing and applying the design of a UI component configuring an application according to a usage environment of an electronic apparatus which drives the application and the operating method thereof to provide an appropriate UI design according to the device's usage environment of a user to the user.

Abstract: Disclosed is technology that recommends an appropriate design template to each component constituting the UI to a UI developer by considering the platform related to an industrial classification of a UI to be developed by the UI developer, a job of a user who is to use the UI, and a target product to which the UI is to be applied to support the UI developer to more easily develop a UI in a direction desired by the UI developer.

Abstract: A flat panel lighting apparatus, which makes it easy to replace a circuit board with LEDs thereon, is provided. The flat panel lighting apparatus includes a backplate, a driving unit, a light guide plate, a frame, a bracket, a circuit board, a connector and a cable connecting the driving unit and the circuit board. The frame with an opening portion is disposed at an outer periphery of the backplate and the light guide plate. The bracket is detachably coupled to the opening portion of the frame. The circuit board with light sources, is disposed in a space between the frame and the light guide plate, and is replaceable in a sliding type through the opening portion of the frame when the bracket is decoupled from the frame. The connector has a female terminal attached to the circuit board and a male terminal detachably coupled to the female terminal.

Abstract: A flat panel lighting apparatus, which makes it easy to replace a circuit board with LEDs thereon, is provided. The flat panel lighting apparatus includes a backplate, a driving unit, a light guide plate, a frame, a bracket, a circuit board, a connector and a cable connecting the driving unit and the circuit board. The frame with an opening portion is disposed at an outer periphery of the backplate and the light guide plate. The bracket is detachably coupled to the opening portion of the frame. The circuit board with light sources, is disposed in a space between the frame and the light guide plate, and is replaceable in a sliding type through the opening portion of the frame when the bracket is decoupled from the frame. The connector has a female terminal attached to the circuit board and a male terminal detachably coupled to the female terminal.

Abstract: An apparatus of correcting belt-meandering for a secondary battery is disclosed. In one embodiment, the apparatus includes i) upper and lower rollers configured to receive a base material therebetween, wherein the base material comprises positive and negative electrode materials and an insulating material interposed between the electrode materials and ii) a driver portion configured to rotate the upper and lower rollers such that the base material is transferred in a first direction during the rotation. The apparatus may also include i) a support portion configured to support shafts of the driver portion and the upper and lower rollers and ii) a transverse moving mechanism configured to move the support portion in a second direction substantially perpendicular to the first direction.

Abstract: An apparatus of correcting belt-meandering for a secondary battery is disclosed. In one embodiment, the apparatus includes i) upper and lower rollers configured to receive a base material therebetween, wherein the base material comprises positive and negative electrode materials and an insulating material interposed between the electrode materials and ii) a driver portion configured to rotate the upper and lower rollers such that the base material is transferred in a first direction during the rotation. The apparatus may also include i) a support portion configured to support shafts of the driver portion and the upper and lower rollers and ii) a transverse moving mechanism configured to move the support portion in a second direction substantially perpendicular to the first direction.

Abstract: A cutting apparatus of a winder for a secondary battery includes a cutting roll contacting a first side of a material, the cutting roll having a cutter protruding through an outer circumferential surface of the cutting roll to contact the first side of the material during cutting, an anvil roll facing the cutting troll and contacting a second side of the material, the cutting roll and the anvil roll being configured to contact each other via the material only at predetermined process stages, and a controller configured to move the cutting roll and/or the anvil roll to contact each other via the material during the predetermined process stages.

Abstract: A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.

Abstract: A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

Abstract: A method for controlling a selection ratio of a chemical-mechanical-polishing slurry composition for polishing and ablating an oxide layer selectively in relation to a nitride layer, the method includes: a step of confirming a polishing-rate selection ratio of an oxide layer to a nitride layer of a chemical-mechanical-polishing slurry composition which includes ceria polishing particles, a dispersing agent, and an anionic additive, while a concentration of the anionic additive is changed; and a step of adjusting the concentration of the anionic additive to attain a desired selection ratio of the slurry composition, on the basis of the confirmed polishing-rate selection ratio, thereby controlling the selection ratio of the slurry composition.

Abstract: Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.

Abstract: The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 ?m with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.