Abstract: The method includes connecting a MOSFET-type transistor to the photovoltaic installation; applying, to the transistor, a signal of a control voltage (Vgs) that crosses a linear regime range (?lin) of the transistor, between two critical voltages including a saturation voltage (Vgs(sat)) and a threshold voltage (Vgs(th)), and measuring the current and the voltage of the photovoltaic installation while the linear regime range of the transistor is being crossed. The control voltage signal (Vgs) of the transistor is generated from a digital control signal. The transistor initially being in short-circuit (?cc) or open-circuit (?co) regime, a command is issued for a first, rapid variation (BT1) in the control voltage (Vgs) in the direction of the linear regime range of the transistor, then a second, slow variation (BT2) in the control voltage (Vgs) crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.

Abstract: A method of charging a battery of electric accumulators from the electric energy supplied by an electric generator, wherein the battery is chary to a first maximum state-of-charge in a first operating mode and to a second maximum state-of-charge, lower than the first maximum state-of-charge, in a second operating mode. The method includes switching from the first mode to the second mode when a first condition relative to the day length, or to the variation of the day length, is fulfilled and comprises switching from the second mode to the first mode when second conditions are fulfilled, the second conditions including determining that the day length becomes shorter than a first duration threshold and determining that a criterion determined from the environmental conditions of the electric generator or of the battery is fulfilled.

Abstract: The method includes connecting a MOSFET-type transistor to the photovoltaic installation; applying, to the transistor, a signal of a control voltage (Vgs) that crosses a linear regime range (?lin) of the transistor, between two critical voltages including a saturation voltage (Vgs(sat)) and a threshold voltage (Vgs(th)), and measuring the current and the voltage of the photovoltaic installation while the linear regime range of the transistor is being crossed. The control voltage signal (Vgs) of the transistor is generated from a digital control signal. The transistor initially being in short-circuit (?cc) or open-circuit (?co) regime, a command is issued for a first, rapid variation (BT1) in the control voltage (Vgs) in the direction of the linear regime range of the transistor, then a second, slow variation (BT2) in the control voltage (Vgs) crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.