Abstract: The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device.

Abstract: The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device.