Patents by Inventor Jean Camassel

Jean Camassel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6734514
    Abstract: A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.
    Type: Grant
    Filed: February 26, 2003
    Date of Patent: May 11, 2004
    Assignee: Centre National de la Recherche-Scientifique - CNRS
    Inventors: Jean-Louis Robert, Julien Pernot, Jean Camassel, Sylvie Contreras
  • Publication number: 20030164530
    Abstract: A Hall effect sensor formed in a multilayer structure including a thin active layer deposited on a substrate, wherein the substrate is an insulating, semi-insulating or semiconductor material of type p− or n+, respectively, to electrically isolate the active layer of the substrate and wherein the active layer is a weakly doped semiconductor material of type n− or p− in an exhaustion regime.
    Type: Application
    Filed: February 26, 2003
    Publication date: September 4, 2003
    Applicant: Centre National de la Recherche Scientifique - CNRS, a corporation of France
    Inventors: Jean-Louis Robert, Julien Pernot, Jean Camassel, Sylvie Contreras