Abstract: High current ion implanter of the type comprising, in a vacuum enclosure, an ion source, means for extracting these ions, scanning means and a sample-carrying target, wherein the scanning means are of the electrostatic type and comprise deflecting plates connected to a sawtooth-variable voltage source and wherein a regulatable magnetic refocussing means are disposed in the vicinity of said plates.A particular application of the invention is to the construction of ion implanters intended for use in the manufacture of semiconductors.

Abstract: Two current supply conductors connected to an emissive filament located within a vacuum enclosure are each constituted by a leak-tight tube formed of material other than a heavy metal which traverses the enclosure wall through a leak-tight bushing, and by a conductor of electrically conductive heavy metal such as copper which is placed inside the leak-tight tube and completely isolated from the vacuum enclosure. This arrangement permits the continued use of heavy metals such as copper for current supply to ion sources without any attendant danger of heavy metal ion formation in the emitted beam.

Abstract: The extraction electrode consists of a metallic screen provided with an opening and placed within a vacuum chamber in front of an ion source, the screen being brought to a negative potential with respect to the source. Displacement of the electrode is controlled from the exterior of the chamber by two mechanical systems for independent displacement of the two lateral sides of the screen. Each system comprises a deformable parallelogram pivotally coupled to a member for supporting one side of the screen and to a member which is slidably mounted on a guide column, and a mechanism for controlling the deformation of the parallelogram by means of a link-arm rigidly fixed at one end to a toothed wheel in mesh with an endless screw and control rod which is accessible from the exterior of the chamber. The invention is primarily applicable to the construction of ion implanters, especially for the fabrication of semiconductors.