Abstract: Method and system for real-time in-situ interactive supervision of a step performed in a tool during semiconductor wafer fabrication process. The system includes a tool and the computer attached thereto, an end point detection controller, a database and a supervisor to supervise the whole wafer processing for that step. The controller is used to monitor a key process parameter of the step and is adapted to perform in-situ measurements. The database contains the evolution of said process parameter in normal operating conditions and in all the identified deviations. It further contains the history of the wafer until this step and a reference to the batch and process names for this step and the wafer identification number. At the end of the step, the important process parameters and any alert code are stored in the database to up-date the wafer history. This technique allows a total clusterized wafer fabrication process and prevents wafer rejection.

Abstract: Device and method for three-dimensional measurements and observation of a surface layer of a thin-film structure, comprising a monitoring unit 4 which includes a video camera 12, a wide-beam illumination source 14, a narrow-beam illumination source, 20, an operation and control unit and a table for horizontal movement. The device comprises a Wollaston prism 24 arranged on the optical path of the narrow light beam, in order to obtain two narrow light beams whose polarization states are linear and mutually orthogonal, a polarizer 27 arranged on the optical axis of the Wollaston prism 24 so that the reflected narrow light beam passes through it after its travel through the Wollaston prism 24, and a detection cell 28.

Abstract: In the manufacturing of 16 Mbit DRAM chips, the deep trench formation process in a silicon wafer by plasma etching is a very critical step when the etching gas includes 0.sub.2. As a result, the monitoring of the trench formation process and thus the etch end point determination is quite difficult. The disclosed monitoring method is based on zero order interferometry. The wafer is placed in a plasma etcher and a plasma is created. A large area of the wafer is illuminated through a view port by a radiation of a specified wavelength at a normal angle of incidence. The reflected light is collected then applied to a spectrometer to generate a primary signal S of the interferometric type. Next, this signal is applied in parallel to two filters. A low-pass filter produces a first secondary signal S1 that contains data related to the deposition rate and the redeposited layer thickness. A band-pass filter produces a second secondary signal S2 that contains data related to the trench etch rate and depth.

Abstract: An illumination beam is sent onto a localized region of the surface layer of a thin-film structure which is being etched in a vacuum processing chamber. The reflective light beam is sent through a filter to the matrix sensor of a video camera, and to an optical disperser or an interference filter, a selection diaphragm, a fiber-optic cable, and an analysis slit at the input of the optical disperser or interference filter. A spectral analysis of the reflective light beam is performed to detect, by reflectometry, the transition of the following layer in a specific analysis region of the localized region.

Abstract: Detecting the desired etch end point in the dry etching of a structure that includes a dielectric film formed onto a substrate down to a given thickness Ef. The structure is placed in the chamber of an etching equipment provided with a view-port. A light source illuminates a portion of the structure at a normal angle of incidence through the view-port. The light contains at least two specified wavelengths (L1, L2) whose value is greater than a minimum value equal to 4*N*e (wherein N is the index of refraction and e the thickness error of the dielectric). The reflected light is applied to spectrometers tuned to each specified wavelength, for converting the reflected light into interference signals that are processed and analyzed in a dedicated unit to generate primary signals (S1, S2). An analysis of the primary signals is performed after a predetermined delay. For each wavelength, a pre-selected extremum of the primary signal is detected and a predetermined number of extrema is counted.

Abstract: A method for in situ quantification of the morphology and the thickness of a localized area of a surface layer of a thin layer structure entails directing a beam of white light and one or two lazer beams onto a sample enclosed in a vacuum treatment chamber, using a monochromator for a spectral analysis of the white light reflected by the sample and/or differential interferometry with a predetermined wavelength to determine the thickness and the instantaneous rate of variation of the thickness of the surface layer of the sample and to display a monochromatic map of the morphology of the localized area obtained by differential interferometry using a matrix camera. One application is controlling vacuum treatment of thin layer structures, especially semiconductors and integrated circuits, monitoring the morphology, thickness and rate of variation of thickness of the surface layer of the treated sample in situ and in real time.

Abstract: Assembly for observation and laser interferometric measurements of articles contained in an enclosure includes a video camera and a laser emitter unit. The laser emitter unit has two laser diodes whose beams follow the optical path of the video camera. An illumination system also follows the optical path of the video camera. The entire assembly is incorporated into a single box. The assembly is utilized for the observation and measurement of thin-film structures, in particular integrated-circuit boards.

Abstract: A device for monitoring the thickness of a low absorption thin film or layer (53B) on an at least partially reflecting substrate (31) placed inside a vacuum chamber (1) closed by a window (7), includes a polarized laser source (8), a polarizing cube (13), placed in the path of the laser beam, consisting of two right-angle prisms (13A, 13B) assembled by their hypotenuse faces by means of a dielectric film (13C), the cube being oriented so that the incident laser beam has a 45 degree angle of incidence with the film, the cube allowing a first part of the incident beam to pass into a first, linear optoelectronic converter (15A) supplying a first electrical signal (I.sub.oe), the cube reflecting a second part of the incident beam to pass through a quarter-wave plate (7, 7A) and reflect off the layer before returning through the cube, without being deflected, and thereafter striking a second converter (15B) supplying a second electrical signal (I.sub.e).

Abstract: An apparatus for producing preforms for the production of optical fibers by plasma coating and drawing. A plasma stream produced with the aid of a radio frequency generator is caused to successively pass through three zones in the first of which a mixture of fluidized powders of two materials of appropriate composition is injected and completely vaporized. In the second zone an oxidizing gas having a mixing action is introduced into the deeply cooled stream. The materials and gas react with each other to form microseeds. The powders contain high purity silicon and at least one doping element of the group comprising Al, Ge, B. Ti and Zr. In the third zone an inert gas is introduced and deposition of substance is effected on substrates suitably arranged with respect to the path followed by the plasma stream.