Patents by Inventor Jean-Charles Barbe
Jean-Charles Barbe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10109484Abstract: Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric layer, achieving at least one among an implantation of ions of at least one chemical element of rare gas type and an implantation of ions of at least one semiconductor element of same nature as that of the thin layer, in at least one part of the thickness of the thin layer; annealing of the thin layer achieving a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, nanocrystals of semiconductor.Type: GrantFiled: December 27, 2016Date of Patent: October 23, 2018Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yann Almadori, Jean-Charles Barbe, Lukasz Borowik
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Patent number: 9853130Abstract: A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.Type: GrantFiled: February 22, 2016Date of Patent: December 26, 2017Assignee: Commissariat á l'énergie atomique et aux énergies alternativesInventors: Sylvain Maitrejean, Emmanuel Augendre, Jean-Charles Barbe, Benoit Mathieu, Yves Morand
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Publication number: 20170186612Abstract: Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric layer, achieving at least one among an implantation of ions of at least one chemical element of rare gas type and an implantation of ions of at least one semiconductor element of same nature as that of the thin layer, in at least one part of the thickness of the thin layer; annealing of the thin layer achieving a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, nanocrystals of semiconductor.Type: ApplicationFiled: December 27, 2016Publication date: June 29, 2017Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Yann Almadori, Jean-Charles Barbe, Lukasz Borowik
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Publication number: 20160254362Abstract: A Method for modifying the strain state of a semiconducting structure, comprising steps to: a) provide at least one first semiconducting structure on a substrate, formed from a semiconducting stack comprising an alternation of elements based on the first semiconducting material and elements based on the second semiconducting material, then b) remove portions of the second semiconducting material from the first structure so as to form empty spaces, c) fill in the empty spaces with a dielectric material, d) form a straining zone on the first structure, based on a first strained material, e) perform appropriate thermal annealing so as to make the dielectric material creep or relax, and cause a change in the strain state of elements based on the first semiconducting material in the structure.Type: ApplicationFiled: February 22, 2016Publication date: September 1, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Sylvain MAITREJEAN, Emmanuel AUGENDRE, Jean-Charles BARBE, Benoit MATHIEU, Yves MORAND
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Patent number: 8853023Abstract: A method for stressing a pattern having a pattern surface, in a layer of semiconductive material that can be silicon on the surface of a stack of layers generated on the surface of a substrate, said stack comprising at least one stress layer of alloy SixGey with x and y being molar fractions, and a buried layer of silicon oxide, comprises: etching at the periphery of a surface of dimensions greater than said pattern surface, of the buried layer of silicon oxide and layer of alloy SixGey over a part of the depth of said layer of alloy; the buried layer of silicon oxide being situated between said layer of semiconductive material and said stress layer of alloy SixGey. In a transistor structure, etching at the periphery of said surface obtains a pattern thus defined having dimensions greater than the area of interest situated under the gate of the transistor.Type: GrantFiled: January 29, 2013Date of Patent: October 7, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Simeon Morvan, Francois Andrieu, Jean-Charles Barbe
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Patent number: 8697548Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.Type: GrantFiled: May 4, 2012Date of Patent: April 15, 2014Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche ScientifiqueInventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
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Patent number: 8647957Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.Type: GrantFiled: May 4, 2012Date of Patent: February 11, 2014Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, Centre National de la Recherche ScientifiqueInventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frederic Leroy, Denis Mariolle, Pierre Muller
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Patent number: 8583403Abstract: A method for the determination of the diffusion tensor anisotropy or the surface energy anisotropy that does not require the formation of particular structures, and that is capable of being performed in cases of moderate-amplitude perturbations. The invention relates to measuring the temporal evolution of natural or artificial roughnesses, and analyzing the results in the firm of the 2D power spectral density for moderate-amplitude perturbations typically characterized by amplitude/wavelength ratios of the perturbation for a spatially defined perturbation having two wavelengths along two orthogonal directions, the ratios typically being less than 0.3.Type: GrantFiled: April 30, 2009Date of Patent: November 12, 2013Assignee: Commissariat a l'Energie AtomiqueInventors: Francois De Crecy, Jean-Charles Barbe, Daniel Girardeau-Montaut
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Patent number: 8530292Abstract: A method for manufacturing a strained channel MOS transistor including the steps of: forming, at the surface of a semiconductor substrate, a MOS transistor comprising source and drain regions and an insulated sacrificial gate which partly extends over insulation areas surrounding the transistor; forming a layer of a dielectric material having its upper surface level with the upper surface of the sacrificial gate; removing the sacrificial gate; etching at least an upper portion of the exposed insulation areas to form trenches therein; filling the trenches with a material capable of applying a strain to the substrate; and forming, in the space left free by the sacrificial gate, an insulated MOS transistor gate.Type: GrantFiled: September 9, 2011Date of Patent: September 10, 2013Assignees: STMicroelectronics (Grenoble 2) SAS, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Yves Morand, Thierry Poiroux, Jean-Charles Barbe
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Patent number: 8363330Abstract: An optical device having a deformable membrane comprising a flexible film having at least one peripheral anchoring zone, a central zone and an intermediate zone between the central zone and the anchoring zone. The membrane also includes one or more movable parts of electrostatic actuating means, each movable part being formed from a leg terminating on one side in a foot mechanically fastened to a film-fastening region located in the intermediate zone and terminating on the other side in a free end. The legs incorporate a movable electrode, the free end having to be attracted by a fixed electrode of the actuating means. The free end is placed facing the free end so as to deform at least the central zone of the membrane.Type: GrantFiled: April 17, 2009Date of Patent: January 29, 2013Assignee: Commissariat a l'Energie AtomiqueInventors: Sébastien Bolis, Jean-Charles Barbe, Pierre-Louis Charvet
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Patent number: 8343780Abstract: The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising: an etching step of the prestressed layer, perpendicular to its surface.Type: GrantFiled: July 5, 2005Date of Patent: January 1, 2013Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Charles Barbe, Thomas Ernst
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Publication number: 20120282759Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.Type: ApplicationFiled: May 4, 2012Publication date: November 8, 2012Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Lukasz BOROWIK, Jean-Charles BARBE, Ezra BUSSMANN, Fabien CHEYNIS, Frédéric LEROY, Denis MARIOLLE, Pierre Müller
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Publication number: 20120282758Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.Type: ApplicationFiled: May 4, 2012Publication date: November 8, 2012Applicants: Centre National De La Recherche Scientifique, Commissariat a L'Energie Atomique Et Aux Ene AltInventors: Lukasz BOROWIK, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
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Patent number: 8252636Abstract: A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method including the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.Type: GrantFiled: November 7, 2008Date of Patent: August 28, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Erwan Dornel, Jean-Charles Barbe, Thomas Ernst
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Patent number: 8236698Abstract: The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).Type: GrantFiled: December 20, 2007Date of Patent: August 7, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Charles Barbe, Erwan Dornel, François De Crecy, Joël Eymery
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Publication number: 20120153394Abstract: A method for manufacturing a strained channel MOS transistor including the steps of: forming, at the surface of a semiconductor substrate, a MOS transistor comprising source and drain regions and an insulated sacrificial gate which partly extends over insulation areas surrounding the transistor; forming a layer of a dielectric material having its upper surface level with the upper surface of the sacrificial gate; removing the sacrificial gate; etching at least an upper portion of the exposed insulation areas to form trenches therein; filling the trenches with a material capable of applying a strain to the substrate; and forming, in the space left free by the sacrificial gate, an insulated MOS transistor gate.Type: ApplicationFiled: September 9, 2011Publication date: June 21, 2012Applicants: Commissariat à l'Energie Atomique et aux Energies Alternatives, STMicroelectronics (Grenoble 2) SASInventors: Yves Morand, Thierry Poiroux, Jean-Charles Barbe
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Patent number: 7985632Abstract: A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.Type: GrantFiled: December 20, 2007Date of Patent: July 26, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Charles Barbe, Erwan Dornel, Francois De Crecy, Joel Eymery
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Patent number: 7951659Abstract: A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.Type: GrantFiled: July 17, 2009Date of Patent: May 31, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Younes Lamrani, Jean-Charles Barbe, Marek Kostrzewa
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Publication number: 20110032624Abstract: An optical device having a deformable membrane comprising a flexible film having at least one peripheral anchoring zone, a central zone and an intermediate zone between the central zone and the anchoring zone. The membrane also includes one or more movable parts of electrostatic actuating means, each movable part being formed from a leg terminating on one side in a foot mechanically fastened to a film-fastening region located in the intermediate zone and terminating on the other side in a free end. The legs incorporate a movable electrode, the free end having to be attracted by a fixed electrode of the actuating means. The free end is placed facing the free end so as to deform at least the central zone of the membrane.Type: ApplicationFiled: April 17, 2009Publication date: February 10, 2011Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Sebastien Bolis, Jean-Charles Barbe, Pierre-Louis Charvet
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Publication number: 20100230674Abstract: The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).Type: ApplicationFiled: December 20, 2007Publication date: September 16, 2010Applicant: COMMISSARIATE A L'ENERGIE ATOMIQUEInventors: Jean-Charles Barbe, Erwan Dornel, Francois De Crecy, Joel Eymery