Abstract: The invention relates to a compact optical structure comprising a semiconductor emitter junction, a laser or a light emitting diode, coupled to a plane waveguide formed by a layer of photo-polymer deposited on a substrate with a suitable index. A surface layer, of photo-polymer for example, enables the registration of photo-induced diffraction structures performing particular optical functions such as that of a distributed reflector, deflector or lens. Such compact structures are applicable, in particular to the designing of simple, small devices, laser sources with distributed external resonators, interferometric gyrometers, hydrophones, multiplexers or demultiplexers.

Abstract: The device has a laser diode with an upper face of gallium arsenide which is partly covered with titanium which forms with the gallium arsenide an ohmic contact of low resistivity. Beneath the gallium arsenide an active layer for emitting light is interposed between two layers with which it forms heterojunction. The assembly is covered with gold which forms with Ga As an ohmic contact of a much higher resistivity. The lines of current and light emission form are thus localized under the titanium.

Abstract: A semiconductor laser with a substrate made of gallium arsenide and layers, epitaxially grown upon the substrate. The upper layer is covered partially by a rib of gallium arsenide and carries one electrical current.

Abstract: The invention relates to a diode capable of alternately operating as a detector and emitter of light in the same frequency band. This diode comprises an active zone disposed between two localizing zones and respectively forming two hetero-junctions with these zones. The reverse biassing voltage is such that the active zone is the seat of the avalanche phenomenon.