Abstract: The diode comprises: a first layer based on a first organic material, which is n-doped in a zone of this layer that is in contact with a cathode, a second layer based on a second organic material, which is p-doped in a zone of this layer that is in contact with an anode, and an electroluminescent zone which is incorporated in one of the layers and is in contact with the other layer, and which is neither n-doped nor p-doped. A high-yield diode is thus obtained in a particularly economical way.

Abstract: An organic light-emitting diode comprising a substrate, an organic light-emitting layer arranged between a first electrode and a transparent and semi-reflecting second electrode with a multilayer structure subdivided into: a first silver-based metallic layer in contact with the organic light-emitting layer, a second aluminum-based metallic layer, and a third dielectric layer, wherein the second metallic layer is inserted between the first metallic layer and the third dielectric layer of the transparent second electrode, the organic light-emitting layer comprises a doped sub-layer in contact with the first metallic layer of the transparent second electrode, and the thickness of the third dielectric layer is adjusted to limit the absorption by the first and second metallic layers of the light emitted by the diode.

Abstract: An organic light-emitting diode comprising a substrate (1), an organic light-emitting layer (3) arranged between a first electrode (2) and a transparent and semi-reflecting second electrode with a multilayer structure subdivided into: a first silver-based metallic layer (4) in contact with the organic light-emitting layer (3), a second aluminum-based metallic layer (5), and a third dielectric layer (6), characterized in that the second metallic layer (5) is inserted between the first metallic layer (4) and the third dielectric layer (6) of the transparent second electrode, that the organic light-emitting layer (3) comprises a doped sub-layer in contact with the first metallic layer (4) of the transparent second electrode, and that the thickness of said third dielectric layer (6) is adjusted to limit the absorption by said first (4) and second (5) metallic layers of the light emitted by the diode.

Abstract: The diode comprises: a first layer based on a first organic material, which is n-doped in a zone of this layer that is in contact with a cathode, a second layer based on a second organic material, which is p-doped in a zone of this layer that is in contact with an anode, and an electroluminescent zone which is incorporated in one of the layers and is in contact with the other layer, and which is neither n-doped nor p-doped. A high-yield diode is thus obtained in a particularly economical way.

Abstract: Tile comprising a substrate coated with at least one array of electrodes which is itself coated with an array of barrier ribs made of a mineral material, the porosity of which is greater than 25%, comprising a porous base underlayer which is inserted between the array of electrodes and the array of barrier ribs and which is made of a mineral material, the porosity of which is greater than 25%. Reinforced porous barrier ribs are obtained; advantageously, this tile does not include a specific dielectric layer; the number of manufacturing steps is limited and the tile can be manufactured entirely at low temperature.

Abstract: Process comprising the following steps: a) deposition of a green layer based on 0.1% of an organic binder, on a mineral filler and on 0.1% to 13% of a mineral binder; b) formation of the barriers by spraying an abrasive material onto a mask applied against this layer, and then removal of the mask; c) deposition of a phosphor-based green layer; d) baking of the two layers, preferably simultaneously. By virtue of the limited amount of organic binder, the abrasion rate is high; if this content is at least 2%, deterioration of the green barriers is avoided.

Abstract: A plasma panel including two plates having a sealed space between them is disclosed. The sealed space is filled with discharge gas and is divided into discharge cells that are bounded between these plates by barrier ribs forming an array. The barrier rib portion that separates any two adjacent cells of the same column includes a cavity that is made in the thickness of that rib, and a notch that brings these two cells into communication with each other through the cavity. Such an arrangement makes it easier to apply the phosphors on the walls of the cells, while at the same time eliminating any risk of optical crosstalk.

Abstract: The invention relates to a method and device for etching a thin conductive layer which is disposed on an insulating plate such as to form an electrode network thereon. Before the etching takes place, a protective film, comprising patterns corresponding to the electrodes in the network, is applied, said film being removed after etching. The inventive etching method consists in: moving the plate in the general direction of the electrodes to be formed; circulating an electrochemical bath in a shear zone which is defined by the surface of the layer to be etched and by the surface of a counter electrode; and passing an electric current between the counter electrode and the zones which are not protected by the protective film, said current being conveyed over a line of contacts which is disposed on the surface of the conductive layer perpendicularly to the direction of passage D. In this way, etching homogeneity and network formation precision are improved.

Abstract: A plasma panel including two plates having a sealed space between them is disclosed. The sealed space is filled with discharge gas and is divided into discharge cells that are bounded between these plates by barrier ribs forming an array. The barrier rib portion that separates any two adjacent cells of the same column includes a cavity that is made in the thickness of that rib, and a notch that brings these two cells into communication with each other through the cavity. Such an arrangement makes it easier to apply the phosphors on the walls of the cells, while at the same time eliminating any risk of optical crosstalk.

Abstract: Tile comprising a substrate 10 coated with at least one array of electrodes 11 which is itself coated with an array of barrier ribs 17 made of a mineral material, the porosity of which is greater than 25%, comprising a porous base underlayer 18 which is inserted between the array of electrodes 11 and the array of barrier ribs 17 and which is made of a mineral material, the porosity of which is greater than 25%.

Abstract: Process comprising the following steps: a) deposition of a green layer based on 0.1% to 8% of an organic binder, on a mineral filler and on 0.1% to 13% of a mineral binder; b) formation of the barriers by spraying an abrasive material onto a mask applied against this layer, and then removal of the mask; c) deposition of a phosphor-based green layer, d) baking of the two layers, preferably simultaneously. By virtue of the limited amount of organic binder, the abrasion rate is high; if this content is at least 2%, deterioration of the green barriers is avoided.