Patents by Inventor Jean-Claude Oberlin

Jean-Claude Oberlin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6518114
    Abstract: The invention relates to a method of forming an insulating zone (14) around an active zone (12) in a semiconductor substrate, which method includes the following steps: forming a groove around an active zone (12) in the substrate; and filling the groove with a first material so as to form around the active zone an insulating zone (14) which projects from the surface of the substrate and forms a vertical protrusion at its periphery; and blunting the angle of the protrusion of the insulating zone at the periphery at the active zone. The invention further relates to a semiconductor device formed using said method.
    Type: Grant
    Filed: March 23, 2001
    Date of Patent: February 11, 2003
    Assignee: U.S. Philips Corporation
    Inventors: Alain Inard, Dominique Cecile Zulian, Didier Levy, Meindert Martin Lunenborg, Walter Jan August De Coster, Jean Claude Oberlin
  • Patent number: 6391802
    Abstract: Method of manufacturing a capacitor integrated onto a silicon substrate, comprising a step of depositing a layer of first electrode, a step of depositing a layer of a dielectric material, a step of exposure of the dielectric layer to a plasma and a step of depositing a layer of second electrode. This creates the advantage of a design of capacitors with metallic electrodes having a good linearity versus voltage.
    Type: Grant
    Filed: August 22, 2000
    Date of Patent: May 21, 2002
    Assignee: STMicroelectronics, S.A.
    Inventors: Philippe Delpech, Jean-Claude Oberlin
  • Patent number: 6372570
    Abstract: A method of manufacturing a capacitor includes the steps of depositing a first metal level and etching it to leave in place a region corresponding to a first plate of a capacitor and an area of contact with an upper level; depositing an insulating layer; forming a first opening above the first capacitor plate; depositing a thin insulating layer; forming a second opening above the contact area; depositing a second metal level; removing by physico-chemical etching the second metal layer outside regions where it fills up the openings; and depositing a third metal level and leaving in place portions thereof.
    Type: Grant
    Filed: July 16, 1999
    Date of Patent: April 16, 2002
    Assignees: STMicroelectronics S. A., Koninkluke Philips Electronics N.V.
    Inventors: Yvon Gris, Germaine Troillard, Jocelyne Mourier, Jos Guelen, Geneviève Lunardi, Henri Banvillet, Jean-Claude Oberlin, Catherine Maddalon
  • Publication number: 20010045612
    Abstract: The invention relates to a method of forming an insulating zone (14) around an active zone (12) in a semiconductor substrate, which method includes the following steps:
    Type: Application
    Filed: March 23, 2001
    Publication date: November 29, 2001
    Inventors: Alain Inard, Dominique Cecile Zulian, Didier Levy, Meindert Martin Lunenborg, Walter Jan August De Coster, Jean Claude Oberlin
  • Patent number: 6238941
    Abstract: A method for characterizing a structure including single-crystal silicon-germanium areas on a single-crystal silicon substrate, including the steps of measuring the X-ray diffraction spectrum of the structure, simulating the diffraction spectrum of a single-crystal silicon substrate, simulating the diffraction spectrum of a single-crystal silicon substrate entirely coated with a single-crystal SiGe layer, adding the simulated spectrums while assigning them weights a and 1-a to obtain a sum spectrum, comparing the sum spectrum with the measured spectrum and adjusting the simulation parameters and weight a to reduce the distance between the sum spectrum and the measured spectrum, and after optimizing, adopting the simulation parameters as the measurement parameters.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: May 29, 2001
    Assignee: STMicroelectronics S.A.
    Inventors: Didier Dutartre, Jean-Claude Oberlin