Abstract: A device for regrowth of a thick structure lattice-matched with InP comprising: a Si substrate, an interface layer of SiO2 on the Si substrate, a bonding layer on the interface layer, said bonding layer being made of a III-V material consisting of an alloy of the AlGaInAs family, and a regrowth layer on the bonding layer, said regrowth layer being made of InP.

Abstract: The invention relates to a radiation detector element (10) comprising a stack (15) of layers superimposed in a stacking direction (Z), the stack (15) having a first face (25) and a second face (30) and comprising a radiation-absorbing layer (35) consisting of a first semiconductor material (M1) having a first band gap value and at least one barrier layer (40) consisting of a second semiconductor material (M2) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face (30) has at least one strip (105) defined in the stacking direction (Z) by the barrier layer (40), the strip (105) consisting of the second semiconductor material (M2) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm?3.

Abstract: Disclosed is a radiation detector element including a stack of layers superimposed in a stacking direction, the stack having a first face and a second face and including a radiation-absorbing layer consisting of a first semiconductor material having a first band gap value and at least one barrier layer consisting of a second semiconductor material having a second band gap value, the second band gap value being strictly greater than the first band gap value. The stack further delimits a primary hole traversing each of the layers of the stack, the primary hole receiving at least part of a primary electrode. The barrier layer includes a first conducting zone having a free carrier density greater than or equal to 1.1017/cm?3.

Abstract: Disclosed is a radiation detector element including a stack of layers superimposed in a stacking direction, the stack having a first face and a second face and including a radiation-absorbing layer consisting of a first semiconductor material having a first band gap value and at least one barrier layer consisting of a second semiconductor material having a second band gap value, the second band gap value being strictly greater than the first band gap value. The stack further delimits a primary hole traversing each of the layers of the stack, the primary hole receiving at least part of a primary electrode. The barrier layer includes a first conducting zone having a free carrier density greater than or equal to 1.1017/cm?3.

Abstract: The invention relates to a radiation detector element (10) comprising a stack (15) of layers superimposed in a stacking direction (Z), the stack (15) having a first face (25) and a second face (30) and comprising a radiation-absorbing layer (35) consisting of a first semiconductor material (M1) having a first band gap value and at least one barrier layer (40) consisting of a second semiconductor material (M2) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face (30) has at least one strip (105) defined in the stacking direction (Z) by the barrier layer (40), the strip (105) consisting of the second semiconductor material (M2) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm?3.

Abstract: A method for manufacturing an optical transmitter that includes structures (71-76) defining together transmission means. The method includes a first step in which an InP wafer (3) is bonded on a substrate (1) comprising silicon, then this InP wafer (3) is made thinner to become an InP buffer (4), a second step in which a dielectric mask is laid onto this InP buffer (4), then openings (6) are patterned into chosen locations of this dielectric mask, and a third step in which the structures (71-76) are grown into corresponding patterned openings (6), then remaining parts of the dielectric mask are removed.

Abstract: The general field of the invention is that of tunable semiconductor devices with distributed Bragg grating, and more particularly that of tunable lasers with distributed Bragg grating termed DBRs. The device according to the invention comprises a passive Bragg section comprising a material whose optical index variations are controlled by an injection current, said material of the Bragg section is a strained bulk material, the strain applied to the bulk material being equal to at least 0.1%.

Abstract: A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.

Abstract: A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.