Abstract: Production of a device including: a substrate; multiple components forming an electronic circuit on the substrate; multiple superimposed metal levels of interconnections of the components, wherein the metal levels are located in at least one insulating layer resting on the substrate; and multiple elements made from a positive temperature coefficient conductive polymer material, wherein the elements traverse the insulating layer to a given depth, and are connected to at least one conductive line of a given interconnection level.

Abstract: Production of a device including: a substrate; multiple components forming an electronic circuit on the substrate; multiple superimposed metal levels of interconnections of the components, wherein the metal levels are located in at least one insulating layer resting on the substrate; and multiple elements made from a positive temperature coefficient conductive polymer material, wherein the elements traverse the insulating layer to a given depth, and are connected to at least one conductive line of a given interconnection level.

Abstract: A charge pump including n cells in series, each cell comprising a shift capacitor (Cdi) and a storage capacitor (Cmi), respectively having a shift parasitic capacitor (Cpi) and a storage parasitic capacitor (Cqi). The presence of the parasitic capacitors (Cpi, Cqi) leads to a loss of charge transmitted to the cell. Each cell comprises charge injection means (Cdinji, Cminji) for partially or totally compensating, or even overcompensating, the lost charge quantity. The charge pump may be implemented in silicon-on-insulator technology.

Abstract: The invention relates to a charge pump.

Abstract: A bipolar transistor including an extrinsic base on the surface of a silicon substrate covered by a first layer of doped polycrystalline silicon, an intrinsic base that is separated from the extrinsic base and covered by a second layer of polycrystalline silicon that constitutes the emitter and that is insulated from the first layer of polycrystalline silicon, and a link base that links the extrinsic base to the intrinsic base. The link base is located under the first layer of doped polycrystalline silicon.

Abstract: Process for producing a buried insulating layer in a semiconductor substrate by ion implantation.This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in the substrate through the mask for the direct forming in the exposed area, and forming by lateral dispersion and diffusion into the substrate of implanted ions beneath the mask, a continuous oxide or nitride insulating layer which is buried in the substrate and optionally annealing the implanted substrate for reinforcing the continuity of the insulating layer by lateral diffusion of the implanted ions.