Abstract: The invention relates to a process for fabricating a piezoelectric nanogenerator, to a piezoelectric nanogenerator obtained by this process and to a device including such a piezoelectric nanogenerator connected to a capacitor, said process comprising the following steps: a) providing a membrane (100) made of polarised ?-PVDF or polarised P(VDF-TrFe) copolymer and therefore having piezoelectric properties, said membrane (100) moreover having two external major faces (11, 12) that are separated by a membrane thickness (e); b) irradiating the entirety of the thickness of said membrane (100), via at least one of its two external major faces (11, 12), with heavy ions having a fluence of between 103 ions/cm2 and 1010 ions/cm2, as a result of which a membrane (101) containing latent traces (TL) of the passage of the heavy ions through the entirety of its thickness is obtained; c) revealing the latent traces (TL) using a chemical process of length that is preset so as to preserve a defect zone (ZD) belonging to the l

Abstract: The invention relates to a process for fabricating a piezoelectric nanogenerator, to a piezoelectric nanogenerator obtained by this process and to a device including such a piezoelectric nanogenerator connected to a capacitor, said process comprising the following steps: a) providing a membrane (100) made of polarised ?-PVDF or polarised P(VDF-TrFe) copolymer and therefore having piezoelectric properties, said membrane (100) moreover having two external major faces (11, 12) that are separated by a membrane thickness (e); b) irradiating the entirety of the thickness of said membrane (100), via at least one of its two external major faces (11, 12), with heavy ions having a fluence of between 103 ions/cm2 and 1010 ions/cm2, as a result of which a membrane (101) containing latent traces (TL) of the passage of the heavy ions through the entirety of its thickness is obtained; c) revealing the latent traces (TL) using a chemical process of length that is preset so as to preserve a defect zone (ZD) belonging to the l

Abstract: A method of synthesizing electronic components incorporating nanoscale filamentary structures in which method a metallic catalyst is deposited in a nanoporous membrane , the catalyst being adapted to penetrate in at least some of the pores of the nanoporous membrane , and filamentary structures are grown on the catalyst in at least some of the pores in the nanoporous membrane . The nanoporous membrane is prepared in a manner suitable for ensuring that the wall of the pores include a single-crystal zone, and at least part of the catalyst is grown epitaxially on said single-crystal zone.

Abstract: The invention relates to a method for producing electronic components consisting in carrying out a first anodization of a carrier material (1) for forming at least one first pore (3) extending in a first direction in said carrier material (1) and in carrying out a second anodization for forming at least one second pore (17) extending in the carrier material (1) in a second direction different from the first direction.

Abstract: The invention relates to a method for producing electronic components consisting in carrying out a first anodisation of a carrier material (1) for forming at least one first pore (3) extending in a first direction in said carrier material (1) and in carrying out a second anodisation for forming at least one second pore (17) extending in the carrier material (1) in a second direction different from the first direction

Abstract: A non-volatile random access memory (NVRAM) of the type with magnetoresistive memory elements (1) connected by sets of non-intersecting conductor sense lines (3, 4) which define the address of each memory element (1) and are connectable to a magnetic write/read recording unit. The memory elements are a plurality of magnetoresistive submicron dots or wires (1) embedded in a membrane (2) through which the submicron dots or wires extend. The sets of non-intersecting conductor sense lines (3, 4) are connected to the opposite ends of the submicron dots or wires (1) on opposite sides of the membrane.