Abstract: Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Abstract: Embodiments of the present invention provide a computer system, a voltage resistance controlling apparatus, and a method that comprises at least two electrodes on proximal endpoints; a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide; a second layer disposed on the second layer, wherein the second first layer is made of an electrically conductive metal-oxide; a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the first layer disposed on the second layer operatively connects the at least two electrodes; and a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

Abstract: An approach to provide a semiconductor structure for a resistive switch device. The resistive switch device includes a bottom electrode, a dielectric material over the bottom electrode, and a metal oxide material on a portion of the dielectric material connecting to a portion of a top electrode where the metal oxide material has a controlled volume. Additionally, the approach includes a plurality of the resistive switch devices in a crossbar. The crossbar array includes the plurality of resistive switch devices on more than one bottom electrode and at least one top electrode connecting to the plurality of resistive switch devices.

Abstract: An integrated optical circuit for an optical neural network is provided. The integrated optical circuit is configured to process a phase-encoded optical input signal and to provide a phase-encoded output signal depending on the phase-encoded optical input signal. The phase-encoded output signal emulates a synapse functionality with respect to the phase-encoded optical input signal. A related method and a related design structure are further provided.

Abstract: Embodiments of the present invention provide a computer system, a voltage resistance controlling apparatus, and a method that comprises at least two electrodes on proximal endpoints; a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide; a second layer disposed on the second layer, wherein the second first layer is made of an electrically conductive metal-oxide; a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the first layer disposed on the second layer operatively connects the at least two electrodes; and a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

Abstract: An electrochemical device includes an electrochemical cell and an electric circuit. The electrochemical cell comprises a first solid component and a second solid component. The two solid components comprise same chemical elements but have different concentrations of at least one type of the chemical elements. A solid electrolyte is arranged between the two solid components. The solid electrolyte is a dielectric material. The electric circuit is connected to the electrochemical cell. The electrochemical cell may be operated according to a redox process, so as to exchange chemical elements of the at least one type between the first solid component and the second solid component and thereby change an electrical conductance of each of the two solid components.

Abstract: Embodiment of the invention are directed to transmitting signals between neurons of a hardware-implemented, spiking neural network (or SNN). The network includes neuronal connections, each including a synaptic unit connecting a pre-synaptic neuron to a post-synaptic neuron. Spikes received from the pre-synaptic neuron of said each neuronal connection are first modulated, in frequency, based on a synaptic weight stored on said each synaptic unit, to generate post-synaptic spikes, such that a first number of spikes received from the pre-synaptic neuron are translated into a second number of post-synaptic spikes. At least some of the spikes received from the pre-synaptic neuron may, each, be translated into a train of two or more post-synaptic spikes. The post-synaptic spikes generated are subsequently transmitted to the post-synaptic neuron of said each neuronal connection. The novel approach makes it possible to obtain a higher dynamic range in the synapse output.

Abstract: An integrated optical circuit for an optical neural network is provided. The optical circuit is configured to process a plurality of phase-encoded optical input signals and to provide a phase-encoded optical output signal depending on the phase-encoded optical input signals. The phase-encoded optical output signal emulates a neuron functionality with respect to the plurality of phase-encoded optical input signals. Such an embodied optical circuit uses the phase to encode information in the optical domain. A related method and a related design structure are further provided.

Abstract: A method for hardware-implemented training of a feedforward artificial neural network is provided. The method comprises: generating a first output signal by processing an input signal with the network, wherein a cost quantity assumes a first cost value; measuring the first cost value; defining a group of at least one synaptic weight of the network for variation; varying each weight of the group by a predefined weight difference; after the variation, generating a second output signal from the input signal to measure a second cost value; comparing the first and second cost values; and determining, based on the comparison, a desired weight change for each weight of the group such that the cost function does not increase if the respective desired weight changes are added to the weights of the group. The desired weight change is based on the weight difference times ?1, 0, or +1.

Abstract: An artificial cochlea device for processing audio signals by electro-mechanical amplitude changes may be provided. The device comprises a micro-electro-mechanical system (MEMS) microphone comprising a membrane, an electro-mechanical feedback loop embedded in the MEMS microphone. Thereby, the electro-mechanical feedback loop comprises a piezo-electric actuator acting on the MEMS microphone by influencing the membrane's way to swing, such that an electro-mechanical amplitude change of an output signal is achieved.

Abstract: Aspects of the invention are directed to an electro-optical device having a layer structure including a substrate, an electrically insulating layer on top of the substrate, a bonding layer on top of the electrically insulating layer, a Pockels layer on top of the bonding layer, a waveguide core on top of the Pockels layer, and a cladding layer cladding both the waveguide core and the Pockels layer, the latter coated by the cladding layer. The Pockels layer is a layer of a crystalline first material having a Pockels coefficient between 10 pm/V and 10 000 pm/V. The waveguide core includes a second material, which can be crystalline. The device can be adapted to optically couple radiation into and/or from the waveguide core. Each of the first material and the second material has a larger refractive index than the electrically insulating layer and the cladding layer for said radiation.

Abstract: An electrochemical device includes an electrochemical cell and an electric circuit. The electrochemical cell comprises a first solid component and a second solid component. The two solid components comprise same chemical elements but have different concentrations of at least one type of the chemical elements. A solid electrolyte is arranged between the two solid components. The solid electrolyte is a dielectric material. The electric circuit is connected to the electrochemical cell. The electrochemical cell may be operated according to a redox process, so as to exchange chemical elements of the at least one type between the first solid component and the second solid component and thereby change an electrical conductance of each of the two solid components.

Abstract: A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer is arranged between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.

Abstract: An artificial cochlea device for processing audio signals by electro-mechanical amplitude changes may be provided. The device comprises a micro-electro-mechanical system (MEMS) microphone comprising a membrane, an electro-mechanical feedback loop embedded in the MEMS microphone. Thereby, the electro-mechanical feedback loop comprises a piezo-electric actuator acting on the MEMS microphone by influencing the membrane's way to swing, such that an electro-mechanical amplitude change of an output signal is achieved.

Abstract: Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Abstract: A method for converting a dielectric material including a type IV transition metal into a crystalline material that includes forming a predominantly non-crystalline dielectric material including the type IV transition metal on a supporting substrate as a component of an electrical device having a scale of microscale or less; and converting the predominantly non-crystalline dielectric material including the type IV transition metal to a crystalline crystal structure by exposure to energy for durations of less than 100 milliseconds and, in some instances, less than 10 microseconds. The resultant material is fully or partially crystallized and contains a metastable ferroelectric phase such as the polar orthorhombic phase of space group Pca21 or Pmn21. During the conversion to the crystalline crystal structure, adjacently positioned components of the electrical devices are not damaged.

Abstract: Embodiment of the invention are directed to transmitting signals between neurons of a hardware-implemented, spiking neural network (or SNN). The network includes neuronal connections, each including a synaptic unit connecting a pre-synaptic neuron to a post-synaptic neuron. Spikes received from the pre-synaptic neuron of said each neuronal connection are first modulated, in frequency, based on a synaptic weight stored on said each synaptic unit, to generate post-synaptic spikes, such that a first number of spikes received from the pre-synaptic neuron are translated into a second number of post-synaptic spikes. At least some of the spikes received from the pre-synaptic neuron may, each, be translated into a train of two or more post-synaptic spikes. The post-synaptic spikes generated are subsequently transmitted to the post-synaptic neuron of said each neuronal connection. The novel approach makes it possible to obtain a higher dynamic range in the synapse output.

Abstract: Demodulating a modulated signal. A method may include receiving a modulated signal, wherein the modulated signal is a signal modulated according to a modulation function varying faster than the signal. The modulation function is a function of the signal. The modulated signal received is demodulated with an artificial neural network system, or ANN system, which is trained to identify bit values from signal patterns as caused by the modulation function, by identifying bit values from patterns of the modulated signal received. Related modulation and demodulation systems are disclosed.

Abstract: A tunable resistive element includes a first terminal, a second terminal and a resistive layer having a tunable resistive material. The resistive layer is arranged between the first terminal and the second terminal. The resistive element further includes a piezoelectric layer having a piezoelectric material. The piezoelectric layer is adapted to apply stress to the resistive layer. An electrical resistance of the tunable resistive material is dependent upon a first electrical control signal applied to the first terminal and the second terminal as well as upon the stress applied by the piezoelectric layer to the resistive layer. The stress applied by the piezoelectric layer is dependent on a second electrical control signal applied to the piezoelectric layer.

Abstract: A tunable resistive element includes a first terminal, a second terminal and a resistive layer having a tunable resistive material. The resistive layer is arranged between the first terminal and the second terminal. The resistive element further includes a piezoelectric layer having a piezoelectric material. The piezoelectric layer is adapted to apply stress to the resistive layer. An electrical resistance of the tunable resistive material is dependent upon a first electrical control signal applied to the first terminal and the second terminal as well as upon the stress applied by the piezoelectric layer to the resistive layer. The stress applied by the piezoelectric layer is dependent on a second electrical control signal applied to the piezoelectric layer.