Abstract: In a general aspect, a method for growing an InGaN optoelectronic in a reaction chamber, by MOCVD, includes controlling a surface temperature of a wafer to be at least 750° C. during growth of a light-emitting layer. The light emitting layer includes an InGaN quantum well layer having an In % of greater than 25%. The method further includes providing an indium-containing metalorganic precursor and a gallium-containing metalorganic precursor into the reaction chamber and to the wafer during growth of the light-emitting layer when the surface temperature of the wafer is greater than 750° C. The method also includes providing an N-containing species to the wafer at a rate such that a partial pressure of the N-containing species at the surface of the wafer is greater than 1.5 atmospheres during growth of the light-emitting layer of the optoelectronic device when the surface temperature of the wafer is greater than 750° C.

Abstract: High-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice-matched to GaN layers are grown by metalorganic vapor-phase epitaxy on a GaN buffer layer with no cracks over full 2-inch sapphire wafers. The index contrast relative to GaN is 6.5% to 11% for wavelengths ranging from 950 nm to 380 nm. A crack-free, 20 pairs Al0.84In0.16N/GaN distributed Bragg reflector is grown, centered at 515 nm with over 90% reflectivity and a 35 nm stopband. High-quality AlInN lattice matched to GaN can be used in GaN-based optoelectronics, for waveguides and for mirror structures in resonant-cavity light-emitting diodes and monolithic Fabry-Pérot cavities, for example.