Abstract: A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Abstract: A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Abstract: A method of sealing a first wafer and a second wafer each made of semiconducting materials, including: implanting a metallic species in at least the first wafer, assembling the first wafer and the second wafer by molecular bonding, and after the molecular bonding, forming a metallic ohmic contact including alloys formed between the implanted metallic species and the semiconducting materials of the first wafer and the second wafer, the metallic ohmic contact being formed at an assembly interface between the first wafer and the second wafer, wherein the forming includes causing the implanted metallic species to diffuse towards the interface between the first wafer with the second wafer and beyond the interface.

Abstract: The invention relates to a sealing process for two wafers (2, 12) made of semiconducting materials, comprising: a step for implantation of metallic species (4) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step.

Abstract: The invention concerns a method for making a thin film, which consists in creating a brittle zone embedded by implantation of a chemical species in a substrate, so as to be able subsequently to provoke a fracture of the substrate along said brittle zone to separate therefrom said thin film. The invention is characterized in that the manufacturing method comprises in particular the following steps: a) a first implantation in the substrate at a first depth of a first chemical species; b) implanting at least one second chemical species in the substrate, at a second depth different from said first depth, and at a concentration higher than the concentration of the first species, where the at least a second chemical species is less efficient than the first chemical species for embrittling the substrate; c) diffusing at least part of said secondary species to the vicinity of the first depth; and d) initiating a fracture along the first depth.

Abstract: Process and apparatus for varying the deflection of the path of a charged particle beam over a path of length l in a space volume V, where there is a magnetic induction B (x,y,z), wherein a relative displacement of volume V with respect to the beam is produced in such a way as to vary the magnitude .intg.BDl calculated along the path and characterizing the deflection undergone by the beam on passing through volume V. In some of the embodiments rotating magnetic pole pieces are employed to vary the path. Fixed inclined faced pole pieces are also employed.

Abstract: The invention relates to an apparatus for treating samples comprising in a vacuum enclosure a cathode, an actual anode and a grid, as well as means for supplying the sample to the enclosure, a high voltage generator, a capacitor C.sub.1 charged by way of the said generator, a spark gap switch for producing a high energy pulse between the cathode and the grid, said switch being connected to one terminal of said capacitor, an element for producing pulses controlling the spark gap switch and a capacitor C.sub.2 having a capacitance above that of capacitor C.sub.1, charged by way of the generator used for producing between the actual anode and the cathode an electric field for accelerating and extracting electrons used for the bombardment of the sample.