Abstract: There is provided an array of light emitting elements integrated with meta-surfaces. The meta-surfaces are constructed from a semiconductor alloy comprising at least two different semiconductors. The composition of the semiconductor can be varied so as to provide different refractive indices. A method of manufacture of such an array is also provided.

Abstract: A displacement detector may include a substrate and a membrane having an inner surface facing the substrate. A mounting area may be arranged to fix the membrane along at least part of the perimeter of the membrane, wherein the mounting area, the inner surface and the substrate enclose a back volume. An acoustic compliance of the back volume may be arranged to be the same or larger than an acoustic compliance of the membrane. An optical sensor may be configured to generate a sensor signal indicative of a displacement of the membrane.

Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.

Abstract: A self-mixing interferometric, SMI, laser sensor comprises a vertical cavity surface emitting laser, VCSEL, configured to emit laser radiation, the VCSEL comprising a first distributed Bragg reflector, DBR, a second DBR and a cavity region including an active light generation region, wherein the cavity region is arranged in a layer structure between a front side of the first DBR and a back side of the second DBR. Therein at least one of the first and second DBR comprises a first contrast region and a second contrast region, the first contrast region having a first refractive index contrast ?n1 regarding an emission wavelength of the VCSEL and the second contrast region having a second refractive index contrast ?n2/n larger than the first refractive index contrast ?n1/n.

Abstract: An optoelectronic semiconductor device (1) comprising a semiconductor body (10) having a first region (101), a second region (102) and an active region (103) configured to emit or detect electromagnetic radiation in an emission direction (S) is described herein. The optoelectronic semiconductor device (1) further comprises a first reflector (21) arranged on a first side of the semiconductor body (10) and a second reflector (22) arranged on a second side of the semiconductor body (10), opposite the first side, a first electrode (31) and a second electrode (32), an aperture region (104) and an optical element (40) arranged downstream of the active region (103) in the emission direction (S). The emission direction (S) is oriented parallel to a stacking direction of the semiconductor body (10). The first electrode (31) is arranged on the first region (101) and the second electrode (32) is arranged between the second reflector (22) and the active region (103).

Abstract: An acoustic sensor is disclosed, the sensor including a laser and a membrane configured to vibrate in the presence of an acoustic wave, and to reflect radiation emitted by the laser back toward the laser to produce a self-mixing interference effect corresponding to the acoustic wave. The sensor also includes a cavity separating the membrane from the laser and extending rearward of a radiation-emitting surface of the laser, a majority volume of the cavity being disposed rearward of the radiation-emitting surface of the laser. Also disclosed is an apparatus including the acoustic sensor, and a method of manufacturing the acoustic sensor.

Abstract: Sensing Method and Sensor System A sensing method comprises using a vertical cavity surface emitting laser (VCSEL) to oscillate and emit a laser beam. A diaphragm is used to reflect a portion of the laser beam back into the VCSEL. This method can be referred as self mixing interferometry. A current or voltage at the VCSEL is monitored, and is used to sense movement of the diaphragm. This allows a property external to the VCSEL to be sensed without using a photo-detector.

Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

Abstract: A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.

Abstract: An apparatus that includes a structured light projector which includes a light source, a metalens, and a diffractive optical element (DOE) multiplier. Each of the metalens and the DOE multiplier is integrated onto the light source. The structured light projector is operable such that light beams produced by the light source pass through the metalens and the DOE multiplier.

Abstract: A proximity sensor which uses very narrow divergent beams from Vertical Cavity Surface Emitting Laser (VCSEL) for the illumination source is disclosed. Narrow divergent beams in the range 0.5 to 10 degrees can be achieved to provide high proximity sensing accuracy in a small footprint assembly. One approach to reducing the beam divergence is to increase the length of the VCSEL resonant cavity using external third mirror. A second embodiment extends the length of the VCSEL cavity by modifying the DBR mirrors and the gain region. Optical microlenses can be coupled with the VCSEL to collimate the output beam and reduce the beam divergence. These can be separate optical elements or integrated with the VCEL by modifying the substrate output surface profile or an added a transparent layer. These methods of beam divergence reduction are incorporated into various embodiment configurations to produce a miniature proximity sensor suitable for cell phones and tablets.

Abstract: A device comprising: an illumination device for emitting an illumination beam, the illumination device comprising: an emitter array comprising multiple light emitters; and a meta-structure or micro-prism array comprising multiple transmission areas, the meta-structure of micro-prisms being positioned to receive light emitted from the emitter array, in which light from the meta-structure of micro-prism forms the illumination beam, in which a first one of said multiple transmission areas is arranged to emit light in a different direction than a second one of said multiple transmission areas.

Abstract: An optical sensor module uses polarized light such that, in some instances, crosstalk effects caused by light reflected from a cover glass or from a thin smudge layer on the cover glass can be eliminated, or at least reduced, by directing light of a first polarization through the cover glass toward a target and selectively detecting, in the module, light of a second polarization that is orthogonal to the first polarization.

Abstract: A device includes an illumination device for emitting an illumination beam. The illumination device includes an emitter array including multiple light emitters; and a micro-lens array (MLA) including multiple micro-lenses. The MLA is positioned to receive light emitted from the emitter array. Light from the MLA forms the illumination beam. A first region of the MLA is offset from the emitter array by a first offset amount, and a second region of the MLA is offset from the emitter array by a second offset amount different than the first offset amount.

Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.

Abstract: A VCSEL illuminator package includes one or more VCSELs in a substrate. The one or more VCSELs are operable to generate a VCSEL output radiation beam. An encapsulant covers the one or more VCSELs, and an optical structure is integrated in the encapsulant. The optical structure is disposed in a path of the VCSEL output radiation beam and is operable to change at least one of a propagation characteristic or intensity distribution of the VCSEL output radiation beam exiting the encapsulant.

Abstract: An apparatus that includes a structured light projector which includes a light source, a metalens, and a diffractive optical element (DOE) multiplier. Each of the metalens and the DOE multiplier is integrated onto the light source. The structured light projector is operable such that light beams produced by the light source pass through the metalens and the DOE multiplier.

Abstract: The disclosure describes VCSELs operable to produce very narrow divergent light beams. The narrow divergent beam can be obtained, in part, by incorporating an additional epitaxial layer so as to increase the cavity length of the VCSEL. The increased cavity length can result in higher power in fewer larger diameter transverse modes, which can significantly reduce the output beam divergence. The additional epitaxial layer can be incorporated, for example, into a top-emitting VCSEL or bottom-emitting VCSEL.

Abstract: Polarized light is produced using a VCSEL light source, wherein at least some of the polarized light is reflected or scattered by an object. At least some of the reflected or scattered polarized light is received in a sensor that is operable selectively to detect received light having a same polarization as the light produced by the VCSEL light source. In some instances, signals from the sensor are processed to obtain a three-dimensional distance image of the object or are processed using a time-of-flight technique to determine a distance to the object.

Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.