Abstract: Provided is a novel semiconductor processing system. The system includes a process chamber for treating a semiconductor substrate with one or more process gases comprising water vapor, means for delivering the water vapor or one or more precursors thereof to the process chamber, an exhaust conduit connected to the process chamber, an absorption spectroscopy system for sensing water vapor in a sample region, and a control system which controls water vapor content in the process chamber. Also provided is a method for controlling the water vapor level in a semiconductor process chamber. The system and method allow for measurement and control of the water vapor level in a semiconductor processing chamber in which water vapor is present as a process gas.

Abstract: A process for distributing ultra high purity gases with minimized contamination and particulates including; (a) purging said distribution network or any part thereof with dry inert high purity gas comprising less than 1 ppm of any impurity; (b) evacuating said distribution network or any part thereof at a pressure which is lower than 5.times.10.sup.4 Pascal; (b') optionally wet cleaning a gas distribution network or any part thereof with a wet cleaning agent, thereafter (c) liquid drying the gas distribution network or any part thereof with an H.sub.2 O desorbing liquid drying agent selected from the group including acetone dimethylacetal DMP, 2-2 dichloropropane DCP or 2-2 dibromopropane DBP, mixtures thereof and any equivalent thereof, and (d) distributing an ultra high purity gas through the distribution network or any part thereof.

Abstract: Method and its device for evaluating semiconductor wafers that evaluates semiconductor wafers by estimating the dopant level which is equivalent to the critical value at which the excess minority carrier injection density reaches the high injection state, and that measures the minority carrier lifetime at a low-injection-state exposure condition adapted to said dopant level. Excitation light (emitted by excitation light generator 4) is emitted onto a semiconductor wafer 2 at varying exposure conditions as imposed by an exposure condition controller 9. Detector 6 detects the change in the level of reflected radiation from microwaves emitted by microwave generator 5 onto the wafer 2. The dopant level in the semiconductor wafer 2 is estimated by estimation circuit 10' based on the change in the exposure conditions and the change in the minority carrier lifetime as determined by the change in the microwave level.