Abstract: The present description concerns a method of manufacturing a semiconductor component (170), including the successive steps of: providing a stack including a first semiconductor layer (105) made of a III-N compound and a second conductive layer (107) coating the first layer; forming a trench (110) crossing the second layer (107) and stopping on the first layer (105), said trench laterally delimiting a contact metallization in the second layer (107); forming in said trench (110) a metal spacer (111) made of a material different from that of the second layer (107), in contact with the sides of the contact metallization; and continuing said trench (110) through at least a portion of the thickness of the first layer (105).

Abstract: The present description concerns an optoelectronic device (300) including: a vertical stack of first (101) and second (105) semiconductor layers forming a PN junction, and of a third conductive layer (107) arranged on top of and in contact with the surface of the second layer opposite to the first layer; a peripheral trench (110) crossing the third (107) and second (105) layers, said trench laterally delimiting a portion of the third layer (107) and a portion of the second layer (105); in said trench (110), a conductive spacer (301) in contact with a lateral side of said portion of the third layer (107); and in said trench (110), an insulated conductive gate (113, 111) extending against a lateral side of the conductive spacer (301) and against a lateral side of said portion of the second layer.

Abstract: A method and aperture for providing dress forms. The method comprises taping clothes on a model to retain the figure of the model. The taped clothing is then cut and removed fro the model, creating a shell. The shell is fitted around a pillow and placed on a stand.

Abstract: The present invention relates to a potting system for use with plants, and in particular for using a rock material in a novel potting arrangement and method for improved water and nutrient delivery to potted plants. The present system has two general aspects: the standard soil based growing medium in which the root ball of the plant sits; and, a reservoir for fluid that is continuously supplied to the plant via capillary action. This fluid is contained in a layer of inert, pH neutral pumice volcanic rock that has preferably been thoroughly washed. Due to the porosity and pore structure of the pumice material, it exhibits strong capillary action properties. This layer of pumice rock sits beneath the root ball of the plant in the base of the pot which lacks drainage holes. An overflow hole may be added a distance above the base of the pot to prevent drowning the root ball. Alternately, the plant, soil and pumice may be housed in a meshed bottom basket which may be inserted within the pot.