Abstract: A method for projecting an electron beam onto a target includes correction of the scattering effects of the electrons in the target. This correction is made possible by a calculation step of a point spread function having a radial variation according to a piecewise polynomial function.

Abstract: A process of manufacturing component with a composite film including a matrix made of thermoplastic polymer and particles inside this matrix. This process includes heating the composite film in order for its temperature to exceed the glass transition temperature of its matrix, then when the composite film is softened, flattening an external face of the composite film by a smooth face resting directly over the whole of this external face, this smooth face forming part of the front face of a flexible membrane, the whole of the rear face of which, located on the side opposite the front face, is pushed against the composite film by a fluid, then cooling the composite film below the glass transition temperature, then withdrawing the membrane in order to mechanically separate its front face from the external face of the composite film.

Abstract: A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopy, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, said point spread function uses Gaussian distribution laws. At least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII functions. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.

Abstract: A method for projecting an electron beam onto a target includes correction of the scattering effects of the electrons in the target. This correction is made possible by a calculation step of a point spread function having a radial variation according to a piecewise polynomial function.

Abstract: A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopy, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, said point spread function uses Gaussian distribution laws. At least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII functions. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.

Abstract: The invention relates to a mould for nano-printing, comprising recess and projection type patterns (12). It also comprises one or several ducts (13), each providing a communication between a mould pattern and a reservoir area (14).

Abstract: The invention relates to a mould for nano-printing, comprising recess and projection type patterns (12). It also comprises one or several ducts (13), each providing a communication between a mould pattern and a reservoir area (14).