Patents by Inventor Jean Hong

Jean Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120287121
    Abstract: It is proposed a computer-implemented method for designing a three-dimensional modeled object, wherein the method comprises the steps of: user-interacting with a screen; defining a stroke corresponding to the user-interacting; discretizing the stroke into a set of points; projecting the set of points onto at least one support in a three-dimensional scene; constructing the three-dimensional modeled object from the projected set of points and the said at least one support.
    Type: Application
    Filed: May 1, 2012
    Publication date: November 15, 2012
    Applicant: Dassault Systemes
    Inventors: Jean Hong, Mikaël Queric, Jérôme Derel, Frédéric Letzelter
  • Publication number: 20120280177
    Abstract: An organic fiber for a solar panel and a photoluminescent element and a material for preparing the same are provided. An organic conjugated polymer is dissolved in a solvent and is used to prepare an organic conjugated polymer fiber directly in an electrospinning process. The organic conjugated polymer fiber is applied in an organic photoluminescent base material with a high luminous efficiency or an organic solar panel with a high absorption efficiency. The organic conjugated polymer fiber is prepared directly by using the electrospinning process, and a diameter of the organic conjugated polymer fiber is between about 10 nm and 100 ?m.
    Type: Application
    Filed: May 4, 2011
    Publication date: November 8, 2012
    Inventors: Jean-Hong CHEN, Chien-Yi LI, Jia-Cheng LI
  • Patent number: 6340629
    Abstract: Disclosed is a method for forming gate electrodes using tungsten formed on a tungsten nitride layer by the chemical vapor deposition(CVD) process rather than the physical vapor deposition(PVD) process. According to the method for forming gate electrodes of the present invention, a silicon layer is formed as a conductive layer for gate electrodes. A tungsten nitride layer is formed on the silicon layer, and then the tungsten nitride layer is thermally treated thereby making a surface of the tungsten nitride layer a first tungsten layer. Next, a second tungsten layer is formed by using the first tungsten layer as a nucleation layer according to the CVD process. According to the present method for forming gate electrodes, tungsten can be deposited by the CVD process rather than by the PVD process. Therefore, those problems such as washing equipment and the particle source which are necessarily accompanied with the PVD process can be prevented, thereby improving productivity and yield.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: January 22, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: In Seok Yeo, Jean Hong Lee
  • Patent number: D632692
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: February 15, 2011
    Assignee: NOOMEO
    Inventors: Sebastien Rosel, Jean Hong, Charles Pasquier