Abstract: The present invention pertains to a method and apparatus for the deposition and measurement of anti-reflective coatings on non-resonating semiconductor laser amplifiers. Two faces (15-1, 15-2) of the amplifier (15) alternately receive the sputtered material in small quantities. The semiconducting structure is supplied with constant current (16) and the voltage (V) is measured at the terminals of the structure. When the coatings are deposited on both faces, the voltage increases and passes through a maximum corresponding to the reflectivity minimum at which point deposition of the coating is stopped. The two faces are treated in the same way with coatings of the same thickness.

Abstract: Method to control the thickness of an antireflection coating.According to the invention, the semi-conductive structure (14) is fed with a constant current (16) and the voltage (24) is measured at its terminals. This voltage passes through a maximum when the reflectivity of the antireflection coating passes through a minimum.Application for the embodiment of semi-conductive lasers.

Abstract: Process for producing an injection laser and laser obtained by this process. The active layer is weakly n doped. The same mesa is used for carrying out a proton implantation and a zinc diffusion. The active stripe is transversely limited by two homojunctions and two index jumps and the final structure is planar. In addition, there is an auto-alignment of the implanted and diffused zones.Application to the construction of lasers used in optical telecommunication systems.