Abstract: A method for manufacturing an optical transmitter that includes structures (71-76) defining together transmission means. The method includes a first step in which an InP wafer (3) is bonded on a substrate (1) comprising silicon, then this InP wafer (3) is made thinner to become an InP buffer (4), a second step in which a dielectric mask is laid onto this InP buffer (4), then openings (6) are patterned into chosen locations of this dielectric mask, and a third step in which the structures (71-76) are grown into corresponding patterned openings (6), then remaining parts of the dielectric mask are removed.

Abstract: An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.

Abstract: An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.

Abstract: A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 ?m, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x?0.48, y?1?z?p, z?0.05, p?0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).

Abstract: A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 ?m, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x?0.48, y?1-z-p, z?0.05, p?0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).

Abstract: A semiconductor Bragg reflector and to a method of fabricating it. The reflector comprises a plurality of stacked layers on a substrate of a III-V type material, one of the stacked layers forming a holographic grating. The layer forming the grating comprises an alternating succession of air pockets and of III-V type material. Such a reflector is particularly suitable for use in laser devices.

Abstract: In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.

Abstract: A semiconductor photonic diplex transceiver includes a laser to generate a first optical signal having a certain wavelength and a photodetector to detect a second optical signal having another wavelength. The diplex transceiver also includes an absorber of the first signal disposed between the laser and the detector which form integral parts of an optical waveguide. The laser generates the first signal in the form of a continuous wave and is disposed between the absorber and a selective modulator of the first signal. This reduces the problems of optical and electrical crosstalk between the transmit and receive functions. Applications include user premises optical fiber transmit/receive equipments.

Abstract: An optical waveguide includes, in monolithic manner, a rear segment, a transition segment, and a front segment extending and succeeding one another along the length of the waveguide. A lateral confinement factor and a width the waveguide are respectively larger and smaller in the rear segment than in the front segment. According to the invention, the width increases in the transition segment until it reaches a value that is larger than that of the front segment. The invention is particularly applicable to integrating together a laser and an optical modulator for a telecommunications system.

Abstract: A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.30 doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (b 12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.

Abstract: A method of manufacturing a semiconductor device comprising at least the step of forming by a so-called method of deposition from the chloride vapour phase two superimposed epitaxial layers, the lower layer being made of a ternary compound and the upper layer being made of a binary compound, both of a semiconductor material of the III-V group, characterized in that the operating conditions of deposition temperature and molar fractions of the compounds required to form the layers are chosen so that both the lower layer of ternary material and the upper layer of binary material have before, during and after the transient state corresponding to the passage from the lower layer to the upper layer a maximum rate of coverage with chlorine (Cl) atoms.Application: hetero-structure GaInAs/InP for optoelectronic integrated circuits.

Abstract: A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.+ doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.

Abstract: An integrated semiconductor arrangement of the coupling type between a photodetector D and a light wave guide G.sub.1, operating in a band of given wavelengths, containing on the surface of a semiconductor substrate S of a III-V compound one after the other a confining layer C.sub.0 of III-V compound and a transparent layer C.sub.1 of a III-V compound for the operating wavelengths having an index superior to that of the confining layer, the light waveguide G.sub.1 being realized in layer C.sub.1, and also containing an absorbing layer C.sub.3 of a III-V compound for the operating wavelengths having an index superior to that of the waveguide, in which layer C.sub.3 the photodetector is realized, characterized in that the absorbing layer C.sub.3 is deposited on top of the transparent layer C.sub.1 such that the photodetector is formed on the surface of the light wave guide G.sub.1 and coupled to the latter in parallel with its axis over a given coupling length L.sub.