Abstract: A measurement system for performing measurement by Brillouin scattering analysis, the system comprising a laser emitter device (10) configured to emit an incident wave (?0) and a reference wave (?0??B), the incident wave presenting an incident frequency (?0) and the reference wave presenting a reference frequency (?0??B), the reference frequency (?0??B) being shifted from the incident frequency (?0) by a predetermined value (?B). The system is configured to: project the incident wave (?0) into the optical fiber (25); receive in return a backscattered wave (?0??S); generate a composite wave (?0-S, 0-B) combining the backscattered wave (?0??S) and the reference wave (S0??B); and determine at least one property relating to the fiber by analyzing a Brillouin spectrum of the composite wave (?0-S, 0-B). Advantageously, the incident wave and the reference wave come from a dual-frequency vertical-cavity surface-emitting laser source (12) forming part of the laser emitter device.

Abstract: A measurement system for performing measurement by Brillouin scattering analysis, the system comprising a laser emitter device (10) configured to emit an incident wave (?0) and a reference wave (?0??B), the incident wave presenting an incident frequency (?0) and the reference wave presenting a reference frequency (?0??B), the reference frequency (?0??B) being shifted from the incident frequency (?0) by a predetermined value (?B). The system is configured to: project the incident wave (?0) into the optical fiber (25); receive in return a backscattered wave (?0??S); generate a composite wave (?0-S, 0-B) combining the backscattered wave (?0??S) and the reference wave (S0??B); and determine at least one property relating to the fiber by analyzing a Brillouin spectrum of the composite wave (?0-S, 0-B). Advantageously, the incident wave and the reference wave come from a dual-frequency vertical-cavity surface-emitting laser source (12) forming part of the laser emitter device.

Abstract: The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material (205) onto a growth substrate (200) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror (211); and depositing a heat-conductive substrate (212) onto the metal layer by electrodeposition through an electrically insulating mask (312), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.

Abstract: The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material (205) onto a growth substrate (200) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror (211); and depositing a heat-conductive substrate (212) onto the metal layer by electrodeposition through an electrically insulating mask (312), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.

Abstract: The invention relates to a self-referenced device (1) for measuring the spectral phase of a periodic signal having a frequency fp, the periodic signal being carried by an optical signal, comprising: a phase shifting means (4); a transmission means (3) for transmitting at least three optical modes of said periodic signal to the phase shifting means, said optical modes defining beats at the fp frequency; the phase shifting means (4) being capable of modifying the phase difference between the beats at the fp frequency; characterised in that the measuring means (6, 7, 8) include: photoelectric conversion means (6) for detecting the variable term at the fp frequency of the optical signal received power in order to generate an electric signal (14) corresponding to the superimposition of the optical beats at the fp frequency; electric measuring means (7, 8) for measuring the amplitude of the electric signal in order to determine the amplitude of the beats at the fp frequency.

Abstract: This invention relates to a saturable absorber component comprising an absorbent material located between a front mirror and a rear mirror as well as a method for manufacturing a saturable absorber component. The metallic rear mirror is a metallic buried mirror fixed via a welding joint on a heat conductive substrate. The invention applies to the field of high-rate optical transmission.

Abstract: The invention relates to a saturable absorber component comprising an absorbent material located between a front mirror and a rear mirror as well as a method for manufacturing a saturable absorber component. The metallic rear mirror is a metallic buried mirror fixed via a welding joint on a heat conductive substrate. The invention applies to the field of high-rate optical transmission.

Abstract: A saturable absorber component including an absorbent material located between a front mirror and a rear mirror, and a method for manufacturing a saturable absorber component. The rear mirror is a metallic buried mirror fixed by a welding joint on a heat conductive substrate. The saturable absorber can be applied to the field of high-rate optical transmission.

Abstract: A vertical cavity laser emission component emitting via the surface at a wavelength lying in the range 1.3 .mu.m to 1.55 .mu.m, the component comprising a stack having two mirrors which reflect at the emission wavelength, plus one or more layers which are interposed between the two mirrors and which constitute an amplifying medium for the emitted radiation, wherein, in the vicinity of the amplifying medium, at least one of the mirrors presents a layer of Al.sub.x Ga.sub.1-x As where x lies in the range 0.8 to 1, which layer is selectively oxidized around an active central zone of the amplifying medium. In the method, two samples are grown epitaxially, one on an InP substrate and the other on a GaAs substrate, the two samples obtained in this way are assembled together by epitaxial adhesion of a GaAs layer of the second sample on an InP layer of the first sample, and the resulting sample is subsequently etched and then oxidized by hydrolysis.

Abstract: This invention relates to a process for producing a matrix of "all optical" vertically-structured quantum well components.This process consists in the encapsulation of a half-structure constituted by a lower mirror (2) and an active zone (3) partially covered by a self-alignment mask (4) with a negative dielectric layer (7) whose thickness is given by the Bragg condition at the working wavelength. The encapsulated half-structure is thermally treated to induce an alloy interdiffusion (9) in the non-covered parts of the active zone, and covered with one or several negative and positive layers (10,11) so as to complete the upper Bragg mirror.

Abstract: A process and apparatus for the modulation and amplification of light beams having at least one input light beam (8) supplied to at least one Fabry-Perot resonator having at least one resonance mode, and defined by two mirrors (M1,M2) and produced by stacking layers on a substrate (4). At least one of the layers form an active medium (6) able to amplify the input light beam by stimulated emission, the wavelength thereof being around the resonance of the resonator and the density of free charge carriers in the active medium being varied in such a way as to make the latter sometimes absorbent and sometimes an amplifying with respect to the input beam and thus obtain at least one output light beam (10) whose intensity is modulated and amplified relative to the input beam. Application to optical telecommunications and to optical interconnections.

Abstract: The system disclosed includes a light source (12) able to emit an intense, coherent, monochromatic beam, called the control beam, whose frequency is equal to the center optical frequency of one of several frequency multiplexed signals, which has been selected, an optical coupler (14) for coupling the signals and the control beam and an optical switching device (16) having an active material with a non-linear optical response, whose passband is narrower than the intervals separating the frequency band occupied by the selected siganl. The device receives the light from the optical coupler and supplies a beam reproducing the information of the selected signal. The invention can be used in telecommunications.

Abstract: Bistable optical device comprising two lasers. The light beam which can be emitted by one of the lasers passes through the amplifying medium of the other and vice versa. According to the invention the lasers are of the semiconductor type and the resonators of the two lasers are tuned to two different wavelengths, the directions of these two beams coinciding.

Abstract: The invention relates to molecular crystals. According to the invention, these crystals are formed from molecules of derivatives of nitropyridine-N-oxide substituted by at least one chiral radical.Application to optical frequency conversion and electrooptics.