Patents by Inventor Jean-Louis Ouvrier-Buffet

Jean-Louis Ouvrier-Buffet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220093674
    Abstract: An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.
    Type: Application
    Filed: December 2, 2021
    Publication date: March 24, 2022
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Louis OUVRIER-BUFFET, Abdelkader ALIANE, Jean-Michel HARTMANN, Julie WIDIEZ
  • Patent number: 11264425
    Abstract: A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: March 1, 2022
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Louis Ouvrier-Buffet, Abdelkader Aliane, Jean-Michel Hartmann, Julie Widiez
  • Publication number: 20220020892
    Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.
    Type: Application
    Filed: December 11, 2019
    Publication date: January 20, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Abdelkader ALIANE, Jean-Louis OUVRIER-BUFFET
  • Publication number: 20220013573
    Abstract: The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).
    Type: Application
    Filed: November 21, 2019
    Publication date: January 13, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Abdelkader ALIANE, Jean-Louis OUVRIER-BUFFET, Claire VIALLE
  • Patent number: 11127875
    Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: September 21, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader Aliane, Jean-Louis Ouvrier-Buffet, Luc Andre, Hacile Kaya
  • Patent number: 11047738
    Abstract: A thermal detector including a substrate, an absorbent membrane including a fixed part and a deformable part, the latter including a shape-memory alloy, and being arranged with respect to the substrate in such a way that its free end is in contact with the substrate at the contact temperature Tc above the austenite start temperature As.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: June 29, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader Aliane, Jean-Louis Ouvrier-Buffet
  • Patent number: 11005002
    Abstract: The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.
    Type: Grant
    Filed: July 7, 2020
    Date of Patent: May 11, 2021
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Willy Ludurczak, Abdelkader Aliane, Luc Andre, Jean-Louis Ouvrier-Buffet, Julie Widiez
  • Publication number: 20210111205
    Abstract: The invention relates to an optoelectronic device (1) comprising: at least one diode (2) that has a semiconductor portion (20) in which a PN or PIN junction is formed; a peripheral conductive layer (40) that extends in the main plane in such a way as to surround the semiconductor portion (20); a peripheral piezoelectric portion (30) that extends in the main plane in such a way as to surround the semiconductor portion (20); a first polarizing electric circuit (30) capable of generating an electric field in the peripheral piezoelectric portion (30) by applying an electric potential at least to the peripheral conductive layer (40) so as to induce a deformation of the peripheral piezoelectric portion (30) in the direction of the main plane, thus causing a tensile deformation of the semiconductor portion (20) in the main plane.
    Type: Application
    Filed: April 15, 2019
    Publication date: April 15, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Abdelkader ALIANE, Luc ANDRE, Jean-Louis OUVRIER-BUFFET
  • Publication number: 20210104644
    Abstract: The invention relates to a process for fabricating at least tensilely strained planar photodiode 1, comprising producing a stack formed from a semiconductor layer 53, 55 made of a first material and from an antireflection layer 20; producing a peripheral trench 30 that opens onto a seed sublayer 22 made of a second material of the antireflection layer 20; epitaxy of a peripheral section 31 made of the second material in the peripheral trench 30; and returning to room temperature, a detecting section 10 then being tensilely strained because of the difference in coefficients of thermal expansion between the two materials.
    Type: Application
    Filed: October 8, 2020
    Publication date: April 8, 2021
    Applicant: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader ALIANE, Jean-Louis OUVRIER-BUFFET
  • Publication number: 20210013361
    Abstract: The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Inventors: Willy Ludurczak, Abdelkader ALIANE, Luc Andre, Jean-Louis Ouvrier-Buffet, Julie Widiez
  • Publication number: 20200176503
    Abstract: A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.
    Type: Application
    Filed: November 26, 2019
    Publication date: June 4, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Louis OUVRIER-BUFFET, Abdelkader ALIANE, Jean-Michel HARTMANN, Julie WIDIEZ
  • Publication number: 20200173858
    Abstract: A thermal detector including a substrate, an absorbent membrane including a fixed part and a deformable part, the latter including a shape-memory alloy, and being arranged with respect to the substrate in such a way that its free end is in contact with the substrate at the contact temperature Tc above the austenite start temperature As.
    Type: Application
    Filed: November 27, 2019
    Publication date: June 4, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader ALIANE, Jean-Louis OUVRIER-BUFFET
  • Publication number: 20200166408
    Abstract: A thermal detector including a three-dimensional structure adapted for detecting electromagnetic radiation, suspended above and thermally insulated from a substrate, including a membrane and an absorber, the latter being formed on the basis of a shape-memory alloy and being adapted to have a flat detection configuration when its temperature is less than or equal to T1 and a cooling curve configuration when its temperature is above an austenite start temperature As.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 28, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader ALIANE, Jean-Louis OUVRIER-BUFFET
  • Publication number: 20200168758
    Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 28, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader ALIANE, Jean-Louis OUVRIER-BUFFET, Luc ANDRE, Hacile KAYA
  • Patent number: 9780247
    Abstract: A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: October 3, 2017
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Norbert Moussy, Jean-Louis Ouvrier-Buffet
  • Publication number: 20170092801
    Abstract: A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.
    Type: Application
    Filed: September 29, 2016
    Publication date: March 30, 2017
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Norbert Moussy, Jean-Louis Ouvrier-Buffet
  • Patent number: 9376346
    Abstract: The invention relates to the use of a material having a spinel ferrite/iron monoxide structure as a sensitive material in the form of a thin film for the bolometric detection of infrared radiation, the chemical composition of said structure, excluding doping agents that may be present, having empirical formula (I): (Fe1?zMz)xO, where x is strictly less than 1 and strictly greater than 0.75. The invention also relates to a bolometric device for infrared radiation detection and infrared imaging, comprising at least one sensor provided with a sensitive element in the form of a thin film as defined above.
    Type: Grant
    Filed: June 11, 2009
    Date of Patent: June 28, 2016
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE, UNIVERSITE PAUL SABATIER (TOULOUSE III), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Philippe Tailhades, Lionel Presmanes, Corinne Bonningue, Bruno Mauvernay, Jean-Louis Ouvrier-Buffet, Agnes Arnaud, Wilfried Rabaud
  • Patent number: 9217674
    Abstract: A terahertz detection device comprises at least one terahertz antenna, a detection microbridge suspended above a substrate comprising a resistive load coupled to the antenna and a resistive bolometric element coupled to the resistive load, a bias circuit for biasing the bolometric element. The device further comprises a skimming microbridge suspended above the substrate, comprising a resistive bolometric element, and substantially identical to the detection microbridge, a reflective metal layer opposite to the skimming microbridge to obtain a destructive interference at the level of the skimming microbridge for a terahertz wavelength, a bias circuit to electrically bias the bolometric element of the skimming microbridge and a read circuit for measuring a difference between the electric signals of the microbridges.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: December 22, 2015
    Assignee: Commissariat A L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Jean-Louis Ouvrier-Buffet, Jérôme Meilhan, Duy Thong Nguyen, François Simoens
  • Publication number: 20150226612
    Abstract: A bolometric detector including at least: a substrate; a membrane suspended above the substrate by support elements; an absorber element comprising at least one MIM structure formed by a lower metal element, an upper metal element and a dielectric element arranged between the lower metal element and the upper metal element; a thermometer element comprising at least one thermometric material; wherein the membrane includes at least the upper metal element of the MIM structure and the thermometric material, and wherein the thermometric material is part of the dielectric element of the MIM structure.
    Type: Application
    Filed: February 9, 2015
    Publication date: August 13, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Ujwol PALANCHOKE, Salim BOUTAMI, Jean-Louis OUVRIER-BUFFET, Jean-Jacques YON
  • Patent number: 9052231
    Abstract: A bolometric detector of a terahertz electromagnetic radiation includes at least one bolometric microbridge suspended above a substrate by support and thermal insulation arms, so as to form a cavity between the microbridge and the substrate. The microbridge includes a radiation collection means for collecting the electromagnetic radiation. A resistive means is resistively coupled with the collection means. A thermometric means is thermally coupled with the resistive means. The collection means includes at least one pair of antennas each of the antennas being substantially parallel to the microbridge. A first antenna is capable of collecting the radiation according to a first polarization axis. A second antenna is capable of collecting the radiation according to a second polarization axis, different from the first polarization axis.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: June 9, 2015
    Assignee: Commissariat A L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Duy Thong N'Guyen, Jerome Meilhan, Jean-Louis Ouvrier-Buffet, Francois Simoens