Patents by Inventor Jean-Louis Pautrat

Jean-Louis Pautrat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming an optical silicon layer on a support and use of said method in the production of optical components
    Publication number: 20060205181
    Abstract: The invention relates to a process for the formation of a silicon layer (22a) with a determined thickness on a support (10), for optical purposes. The process comprises the following steps: a) molecular bonding of a silicon block (20a) on the support, the silicon block having a surface layer (22a) delimited by a cleavage area, b) cleavage of the silicon block along the cleavage area to detach the surface layer from it, c) adjustment of the thickness of the said surface layer. Applications to the manufacture of optical components.
    Type: Application
    Filed: April 26, 2006
    Publication date: September 14, 2006
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Emmanuel Hadji, Jean-Louis Pautrat
  • Method for forming an optical silicon layer on a support and use of said method in the production of optical components
    Publication number: 20040175901
    Abstract: The invention relates to a process for the formation of a silicon layer (22a) with a determined thickness on a support (10), for optical purposes.
    Type: Application
    Filed: March 15, 2004
    Publication date: September 9, 2004
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Emmanuel Hadji, Jean-Louis Pautrat
  • Silicon light-emitting device and method for the production thereof
    Patent number: 6570187
    Abstract: The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region. In addition, the device includes the means for confining the carriers injected by the diode, and the silicon in the active region is mono-crystalline.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: May 27, 2003
    Assignee: Commissariat a l′Energie Atomique
    Inventors: Jean-Louis Pautrat, Hélène Ulmer, Noël Magnea, Emmanuel Hadji
  • Multispectral semiconductor resonant-cavity detector sensitive in at least two wavelength bands
    Patent number: 6013912
    Abstract: A multispectral resonant-cavity detector is formed of at least one cavity (2) resonating at not less than two wavelengths and containing at least two layers (12, 14) that absorb the corresponding radiation and are placed at antinodes specific to stationary waves in the cavity, the cavity having at least two P-N junctions at whose space charge zones the layers are disposed. For each cavity, there are at least two electrical contacts to polarize the two junctions inversely to each other to detect the corresponding radiation.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: January 11, 2000
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Louis Pautrat, Noel Magnea, Emmanuel Hadji
  • Monolithic semiconductor infrared emitter pumped by a switched solid microlaser
    Patent number: 5933444
    Abstract: The invention relates to a device for an infrared light emitter comprising a semiconductor element (12) able to emit infrared radiation and a switched microlaser (2, 4, 6, 8) arranged so as to be able to optically pump the semiconductor element.
    Type: Grant
    Filed: April 25, 1996
    Date of Patent: August 3, 1999
    Assignee: Commissariat A L'Energie Atomique
    Inventors: Engin Molva, Jean-Louis Pautrat