Abstract: A mask (MM) with patterns (MF) for use in a reflection lithography device with a photon beam with a wavelength of less than about 120 nm. Said mask (MM) comprises a planar substrate (ST) fixed to a reflecting structure (SMR) comprising a front face provided with selected patterns (MF) made from a material which is absorbent at the given wavelength and further comprises protection means (SP) which are transparent to the given wavelength and arranged such as to maintain a distance (H) between the perturbing particles (PP) and the patterns (MF) greater than or equal to one of the values of the depth of focus of the lithographic device and the height associated with the percentage of photon absorption by the perturbing particles (PP) which is acceptable.

Abstract: The invention concerns an equipment for monitoring an immersion lithography device provided with a main light source and a projection optics for printing images on a wafer. The propagating medium extending from the projection optics to the wafer consists of a liquid (3). The equipment comprises: a chamber (51) for receiving at least part of said liquid (3), a diffraction grating (50) immersed in the chamber; a secondary light source (271) for emitting a secondary incident beam (20) towards the grating so as to obtain a diffracted beam; angle measuring members (57) capable of measuring at least one diffraction angle corresponding to a maximum intensity of an order of diffraction of the beam diffracted by the grating (500), and computing means (505) for calculating an estimate of a physical quantity concerning the refractive index of the liquid.

Abstract: The invention concerns an equipment for monitoring an immersion lithography device provided with a main light source and a projection optics for printing images on a wafer. The propagating medium extending from the projection optics to the wafer consists of a liquid (3). The equipment comprises: a chamber (51) for receiving at least part of said liquid (3), a diffraction grating (50) immersed in the chamber; a secondary light source (271) for emitting a secondary incident beam (20) towards the grating so as to obtain a diffracted beam; angle measuring members (57) capable of measuring at least one diffraction angle corresponding to a maximum intensity of an order of diffraction of the beam diffracted by the grating (500), and computing means (505) for calculating an estimate of a physical quantity concerning the refractive index of the liquid.

Abstract: A mask (MM) with patterns (MF) for use in a reflection lithography device with a photon beam with a wavelength of less than about 120 nm. Said mask (MM) comprises a planar substrate (ST) fixed to a reflecting structure (SMR) comprising a front face provided with selected patterns (MF) made from a material which is absorbent at the given wavelength and further comprises protection means (SP) which are transparent to the given wavelength and arranged such as to maintain a distance (H) between the perturbing particles (PP) and the patterns (MF) greater than or equal to one of the values of the depth of focus of the lithographic device and the height associated with the percentage of photon absorption by the perturbing particles (PP) which is acceptable.

Abstract: The invention concerns an ellipsometer comprising: a source (2) capable of emitting a broadband ray (4), a polarizer (10) for producing a polarised incident beam (12) adapted to illuminate a sample (16) according to at least a selected angle; an analyzer (24) providing an output beam (28) in response to said reflected beam (20) and at least a reflecting optical element (14) arranged between the source (2) and the sample (16) and/or between the sample (16) and the sensor, and capable of focusing the incident beam (12) and/or the reflected beam (20) according to a selected spot The ellipsometer further comprises at least a first refracting optical element (22) arranged between the sample (16) and the sensor and/or between the source (2) and the sample (16) to collect and focus said reflected beam and/or said incident beam, thereby enabling to provide at least a refracting element (22) and a reflecting element (14) on either side of the sample (16) and hence to place the source and the sensor on the same side re

Abstract: A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and/or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape to reduce off-axis aberrations in the focused beam.

Abstract: A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and/or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape to reduce off-axis aberrations in the focused beam.

Abstract: A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and/or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape to reduce off-axis aberrations in the focused beam.

Abstract: The invention concerns an ellipsometer comprising: a source (2) capable of emitting a broadband ray (4), a polarizer (10) for producing a polarised incident beam (12) adapted to illuminate a sample (16) according to at least a selected angle; an analyzer (24) providing an output beam (28) in response to said reflected beam (20) and at least a reflecting optical element (14) arranged between the source (2) and the sample (16) and/or between the sample (16) and the sensor, and capable of focusing the incident beam (12) and/or the reflected beam (20) according to a selected spot The ellipsometer further comprises at least a first refracting optical element (22) arranged between the sample (16) and the sensor and/or between the source (2) and the sample (16) to collect and focus said reflected beam and/or said incident beam, thereby enabling to provide at least a refracting element (22) and a reflecting element (14) on either side of the sample (16) and hence to place the source and the sensor on the same side re

Abstract: An ellipsometric metrology apparatus for a sample contained in a chamber. A light source outside the chamber produces the illuminating beam. A polarizing device outside the chamber polarizes the illuminating beam. A window of selected dimensions and features is disposed in a plane substantially parallel to the sample surface and at least partly closes the chamber. A first directing device directs the polarized illuminating beam on to an area of the sample along a first optical path extending from the polarizing device to the area of the sample through the window. The first optical path forms a predetermined oblique angle of incidence relative to the sample surface. A polarization analyzing device is outside the chamber, a second directing device directs the reflected beam resulting from the illumination of the sample by the illuminating beam on to the analyzing device along a second optical path extending from the sample towards the analyzing device through the window.

Abstract: An ellipsometric metrology apparatus for a sample contained in a chamber. A light source outside the chamber produces the illuminating beam. A polarizing device outside the chamber polarizes the illuminating beam. A window of selected dimensions and features is disposed in a plane substantially parallel to the sample surface and at least partly closes the chamber. A first directing device directs the polarized illuminating beam on to an area of the sample along a first optical path extending from the polarizing device to the area of the sample through the window. The first optical path forms a predetermined oblique angle of incidence relative to the sample surface. A polarization analyzing device is outside the chamber, a second directing device directs the reflected beam resulting from the illumination of the sample by the illuminating beam on to the analyzing device along a second optical path extending from the sample towards the analyzing device through the window.

Abstract: The ellipsometry device includes a first focusing device, combined with a first optical system, for focusing the light beam from the first optical system onto the sample, a second focusing device, combined with a second optical system, for focusing the beam reflected by the sample surface onto the input of the second optical system, and an optical correction device for correcting, together with the first and second focusing devices, the position of the focused reflected beam so as to reject the interference reflections generated by the surface of the sample opposite the light beam receiving surface, and to obtain a maximum signal level at the photodetector.

Abstract: A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and/or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape to reduce off-axis aberrations in the focused beam.

Abstract: A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and/or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape,to reduce off-axis aberrations in the focused beam.

Abstract: A spectroscopic ellipsometer comprises a wideband light source, together with a first optical system including a rotating polarizer which applies a parallel beam to a sample contained in an enclosure. The reflected beam is picked up by an analyzer in a second optical system which transmits said reflected beam to a monochromator which is followed by a photodetector which is connected to control electronics connected, in turn, to a microcomputer. An optical fiber is provided between the source and the first optical system. Advantageously, a second optical fiber provided between the second optical system and the monochromator.