Patents by Inventor Jean Lu

Jean Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing high quality PVD films
    Patent number: 11802349
    Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: October 31, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Nag B. Patibandla, Yong Cao, Shumao Zhang, Zhebo Chen, Jean Lu, Daniel Lee Diehl, Xianmin Tang
  • Tungsten Fluoride Soak And Treatment For Tungsten Oxide Removal
    Publication number: 20230187204
    Abstract: Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.
    Type: Application
    Filed: June 20, 2022
    Publication date: June 15, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Xiaodong Wang, Kevin Kashefi, Rongjun Wang, Shi You, Keith T. Wong, Yuchen Liu, Ya-Hsi Hwang, Jean Lu
  • METHOD FOR DEPOSITING HIGH QUALITY PVD FILMS
    Publication number: 20210123156
    Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.
    Type: Application
    Filed: September 10, 2020
    Publication date: April 29, 2021
    Inventors: Zihao YANG, Mingwei ZHU, Nag B. PATIBANDLA, Yong CAO, Shumao ZHANG, Zhebo CHEN, Jean LU, Daniel Lee DIEHL, Xianmin TANG
  • METHOD FOR PREPARING INDUCED MESENCHYMAL STEM CELLS AND IMPROVING MESENCHYMAL STEM CELL'S CHARACTERS AND ITS APPLICATIONS
    Publication number: 20180055887
    Abstract: The present invention generally relates to a method for preparing induced mesenchymal stem cells (iMSCs) and its applications. The iMSCs, like MSCs, can differentiate into multiple lineages, which may be beneficial for disease treatments. In addition, the present invention also provides a method for improving the MSC's functional characteristics such that the MSCs are more suitable for cell therapy or in vitro applications.
    Type: Application
    Filed: August 23, 2017
    Publication date: March 1, 2018
    Applicant: ACADEMIA SINICA
    Inventors: Jean LU, Hsiao-Chun HUANG, Pei-Lun LAI
  • PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
    Patent number: 6342133
    Abstract: Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.
    Type: Grant
    Filed: March 14, 2000
    Date of Patent: January 29, 2002
  • PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
    Publication number: 20010030125
    Abstract: Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.
    Type: Application
    Filed: March 14, 2000
    Publication date: October 18, 2001