Abstract: The process of the invention consists of subjecting a metal oxide coating (106, 108), located on a glass substrate (100), to the action of a gaseous plasma (109) containing 10 to 88% by volume of hydrogen, 2 to 30% by volume of a hydrocarbon and 10 to 50% of an inert vector gas, bringing about the formation of a polymer coating (110) on the parts of the substrate not provided with oxide, by dissocation of the gaseous mixture, and the partial chemical etching of the oxide (106, 108) by the formation of organometallic compounds.

Abstract: Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages:1. deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon,2. photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors,3. deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating,4. deposition of a silica coating by reactive gaseous phase plasma,5. deposition of a conductive coating by reactive gaseous phase plasma,6. photoengraving of the conductive coating-silica coating-silicon coating system, without etching the silicide covering the photoengraved metal coating.Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.