Abstract: An apparatus includes a wafer portion and a plurality of die fabricated in the wafer portion in a defined pattern such that the die are separated from each other by a dicing area or a street. The apparatus includes a conductive connection between given adjacent die. The conductive connection is electrically coupled to circuitry disposed on the given adjacent die.

Abstract: An apparatus includes a wafer portion and a plurality of die fabricated in the wafer portion in a defined pattern such that the die are separated from each other by a dicing area or a street. The apparatus includes a conductive connection between given adjacent die. The conductive connection is electrically coupled to circuitry disposed on the given adjacent die.

Abstract: A semiconductor wafer including a plurality of die fabricated therein in a defined pattern. They are separated from each other by a dicing area or street and at least a portion of adjacent die on the wafer include at least a conductive connection between given adjacent die that is electrically interfaced to circuitry disposed on the given adjacent die.

Abstract: A communication device is disclosed having optical and near-field communication capability. The device includes an optical transceiver circuit fabricated on an integrated circuit die and configured to transmit and receive far field signals. A near field transceiver circuit is also fabricated on the integrated circuit die and is configured to transmit and receive near-field electro-magnetic signals. Control circuitry is provided to selectively enable the optical transceiver circuit and the near field transceiver circuit responsive to an external control signal.

Abstract: A semiconductor wafer including a plurality of die fabricated therein in a defined pattern. They are separated from each other by a dicing area or street and at least a portion of adjacent die on the wafer include at least a conductive connection between given adjacent die that is electrically interfaced to circuitry disposed on the given adjacent die.

Abstract: A communication device is disclosed having optical and near-field communication capability. The device includes an optical transceiver circuit fabricated on an integrated circuit die and configured to transmit and receive far field signals. A near field transceiver circuit is also fabricated on the integrated circuit die and is configured to transmit and receive near-field electro-magnetic signals. Control circuitry is provided to selectively enable the optical transceiver circuit and the near field transceiver circuit responsive to an external control signal.

Abstract: The present invention is directed toward a system and apparatus for digitally controlling a bias control signal for at least one transistor. The present invention provides for software writable registers that control the bias control signal. The present invention further provides for the bias control signal to be temperature compensated based upon a temperature signal and a temperature profile stored in software writable registers. The present invention further provides for software control of the initialization and configuration of the bias control signal through stored program control of the values in the software writable registers.

Abstract: A method is shown for producing a distributed PN photodiode having a first active region of the photodiode that can be made arbitrarily thin. A fabrication substrate is doped to have a first conductivity type in order to form the first active region of the photodiode. A layer can also be formed upon the first surface of the fabrication substrate or a first surface of a handling wafer, where the layer can be an oxide layer, where a thickness of the oxide layer can be controlled to form a dielectric refractive reflector, a reflective layer, or a conductive layer. The first surface of the handling substrate is bonded to the first surface of the fabrication substrate. A second surface of the fabrication is then lapped to a obtain a preselected thickness of the first active region. A plurality of second active regions of the photodiode having a second conductivity type is formed on the second surface of the fabrication substrate.