Abstract: A single charge injector, floating gate memory cell wherein the injector diode is defined by an ion implanted region of opposite conductivity type from that of the semiconductor substrate and by a diffused region having the same conductivity type as but higher conductivity than the substrate. Equal hole and electron injection efficiencies can be obtained from this single charge injector. A three terminal access cell having a compact structure is obtained by use of a thick oxide read transistor located between the injector diode and the bootstrap capacitor. The read transistor together with a single address transistor for the cell are connected to the injector diode.