Abstract: The laser includes an amplifier with III-V heterostructure, designed to generate an optical wave, and a waveguide coupled optically to the amplifier, said waveguide having a hat-shaped cross section, the top of which is proximal to the amplifier. The top of the hat and the lateral sides of the hat are covered with a layer of a dielectric material in the vicinity of the amplifier. The hat is formed by a base and a protrusion of the waveguide, the material forming the base being distinct from the material forming the protrusion.

Abstract: The laser device includes an amplifier including a III-V heterostructure arranged to generate photons, and a waveguide which forms a loop and is optically coupled to the amplifier. The amplifier is arranged facing the waveguide only in the region of a first section of the waveguide.

Abstract: Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (10), a photodetection structure (11) and a light source structure (12), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers.

Abstract: A PIN structure semiconductor optical receiver includes first and second electrical contact layers and an intrinsic layer disposed between them. The intrinsic layer includes a stud having a stud axis and a stud cross-section. The first and second contact layers have dimensions in a plane perpendicular to the stud axis that are greater than the stud's cross-section. These layers are also elongated and have longitudinal axes offset angularly relative to each other to minimize facing areas of said electrical contact layers.

Abstract: The laser includes an amplifier with III-V heterostructure, designed to generate an optical wave, and a waveguide coupled optically to the amplifier, said waveguide having a hat-shaped cross section, the top of which is proximal to the amplifier. The top of the hat and the lateral sides of the hat are covered with a layer of a dielectric material in the vicinity of the amplifier. The hat is formed by a base and a protrusion of the waveguide, the material forming the base being distinct from the material forming the protrusion.

Abstract: Optical device with superimposed photonic circuits, for coupling to an optical waveguide. Said device comprises a substrate (44) and, on said substrate, an integrated photonic circuit (46) adapted to be coupled to at least one optical waveguide (48) which transmits a light signal (50) and for processing said signal. According to the invention, the circuit comprises two superimposed elementary integrated photonic circuits (52, 54), each of which is adapted to be coupled to a given polarization state of the signal and to process this state. The invention applies particularly to optical telecommunications.

Abstract: A device for collecting light emitted by a laser source, including an optical wave guide arranged so as to collect a light signal emitted by the laser source, by coupling. The wave guide includes a loop coupled to a laser source in two coupling zones making it possible to recover optical modes circulating along the direction opposite to the required direction for the signal output from the device.

Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Abstract: The invention concerns a gallery mode microdisc system for an electrically pumped optical source, the microdisc (1) being formed on one face of a substrate (2), the lower part of the microdisc being provided with an electrical contact referred to as the lower contact (4), the upper part of the microdisc being provided with an electrical contact referred to as the upper contact (6), the upper part of the microdisc being covered with a protective layer (3) of electrically insulating material, the central part (5) of the microdisc being electrically neutralized in order to prevent the passage of an electric current in said central part.

Abstract: The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.

Abstract: The invention relates to a production method of a lateral electro-optical modulator on an SOI substrate, the modulator comprising a rib waveguide formed in the thin layer of silicon of the SOI substrate, the rib waveguide being placed between a doped region P and a doped region N formed in the thin layer of silicon, the rib waveguide occupying an intrinsic region of the thin layer, at least one doped zone P being formed in the rib and perpendicularly to the substrate. The method comprises masking steps of the thin layer of silicon to define therein the rib of the waveguide, etching of the rib, masking of the thin layer of silicon to delimit the parts to be doped P, doping of the parts to be doped P, masking of the thin layer of silicon to delimit the region to be doped N and doping of the region to be doped N.

Abstract: A light coupler between an optical fiber (6) and a waveguide is made on a semiconductor-on-insulator substrate (1), this substrate (1) comprising a thin layer of semiconducting material in which the waveguide is made. The coupler comprises a light injector (5) and an adiabatic collector (4) made up with an inverted nanotip formed from the thin layer of semiconducting material. The injector (5) is formed on the insulator (3) and has a face (7) for receiving an end of the optical fiber (6). The adiabatic collector (4) has a cross-section which increases from a first end located on the side of said end of the optical fiber (6) right up to a second end which is connected to the waveguide, the injector (5) covering the adiabatic collector (4) and having a rib waveguide shape.

Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Abstract: Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (10), a photodetection structure (11) and a light source structure (12), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers.

Abstract: A device for collecting light emitted by a laser source, including an optical wave guide arranged so as to collect a light signal emitted by the laser source, by coupling. The wave guide includes a loop coupled to a laser source in two coupling zones making it possible to recover optical modes circulating along the direction opposite to the required direction for the signal output from the device.

Abstract: The invention relates to a method for producing a slotted guide, in which: a) a layer of a material having a refractive index less than that of silicon, for example Material having a refractive index less than that of silicon (26), is formed on an etching barrier layer (22), b) two parallel trenches are etched into said material having a refractive index less than that of silicon, with the etching barrier on said etching barrier layer, these two trenches being separated by a wall of said material having a refractive index less than that of silicon (36), c) the trenches thus made are filled with silicon (42, 44).

Abstract: Said device comprises a substrate (44) and, on said substrate, an integrated photonic circuit (46) adapted to be coupled to at least one optical waveguide (48) which transmits a light signal (50) and for processing said signal. According to the invention, the circuit comprises two superimposed elementary integrated photonic circuits (52, 54), each of which is adapted to be coupled to a given polarisation state of the signal and to process this state. The invention applies particularly to optical telecommunications.

Abstract: The invention relates to a production method of a lateral electro-optical modulator on an SOI substrate, the modulator comprising a rib waveguide formed in the thin layer of silicon of the SOI substrate, the rib waveguide being placed between a doped region P and a doped region N formed in the thin layer of silicon, the rib waveguide occupying an intrinsic region of the thin layer, at least one doped zone P being formed in the rib and perpendicularly to the substrate. The method comprises masking steps of the thin layer of silicon to define therein the rib of the waveguide, etching of the rib, masking of the thin layer of silicon to delimit the parts to be doped P, doping of the parts to be doped P, masking of the thin layer of silicon to delimit the region to be doped N and doping of the region to be doped N.

Abstract: A light coupler between an optical fiber (6) and a waveguide is made on a semiconductor-on-insulator substrate (1), this substrate (1) comprising a thin layer of semiconducting material in which the waveguide is made. The coupler comprises a light injector (5) and an adiabatic collector (4) made up with an inverted nanotip formed from the thin layer of semiconducting material. The injector (5) is formed on the insulator (3) and has a face (7) for receiving an end of the optical fiber (6). The adiabatic collector (4) has a cross-section which increases from a first end located on the side of said end of the optical fiber (6) right up to a second end which is connected to the waveguide, the injector (5) covering the adiabatic collector (4) and having a rib waveguide shape.

Abstract: The invention concerns a gallery mode microdisc system for an electrically pumped optical source, the microdisc (1) being formed on one face of a substrate (2), the lower part of the microdisc being provided with an electrical contact referred to as the lower contact (4), the upper part of the microdisc being provided with an electrical contact referred to as the upper contact (6), the upper part of the microdisc being covered with a protective layer (3) of electrically insulating material, the central part (5) of the microdisc being electrically neutralised in order to prevent the passage of an electric current in said central part.